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Dive into the research topics where Danial Bavi is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Research Outputs
- 6 Conference proceeding contribution
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A neural network-based manufacturing variability modeling of GaN HEMTs
Chavez, F., Bavi, D., Miller, N. C. & Khandelwal, S., 2024, 2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS): conference proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 4 p. 8.3Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review
3 Link opens in a new tab Citations (Scopus) -
Compact modeling of power GaN Fin-JFETs I-V characteristics using ASM-HEMT model
Bavi, D. & Khandelwal, S., 2024, 2024 IEEE Texas Power and Energy Conference (TPEC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 1-5 5 p.Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review
1 Link opens in a new tab Citation (Scopus) -
ASM-ESD - a comprehensive physics-based compact model for ESD Diodes
Khandelwal, S. & Bavi, D., 2022, 2022 IEEE International Reliability Physics Symposium (IRPS): proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 5C.1-1-5C.1-6 6 p.Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution
8 Link opens in a new tab Citations (Scopus) -
Compact model for reverse TLP I-V characteristics of ESD diodes
Khandelwal, S. & Bavi, D., 2022, International EOS/ESD Symposium on Design and System 2022. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 4 p.Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution
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Self-consistent compact modeling of first- and third quadrant I-V behavior in SiC MOSFETs
Bavi, D. & Khandelwal, S., 2022, 2022 IEEE Latin American Electron Devices Conference (LAEDC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 4 p.Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review
1 Link opens in a new tab Citation (Scopus)