• 29 Citations
  • 3 h-Index
20182019

Research output per year

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Personal profile

Education/Academic qualification

Microelectronics, M.Tech, IIT-Bombay

25 Jul 200515 Aug 2007

External positions

RF Device Modeling and Reliability Engineer, GLOBALFOUNDRIES

1 Dec 201531 Oct 2017

Device Modeling, Characterization and Reliability Engineer, Maxim Integrated Products Inc.

10 Sep 200730 Nov 2015

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Research Outputs

  • 29 Citations
  • 3 h-Index
  • 4 Article
  • 2 Conference proceeding contribution

ASM GaN: industry standard model for GaN RF and power devices - part 1: DC, CV, and RF model

Khandelwal, S., Chauhan, Y. S., Fjeldly, T. A., Ghosh, S., Pampori, A., Mahajan, D., Dangi, R. & Ahsan, S. A., Jan 2019, In : IEEE Transactions on Electron Devices. 66, 1, p. 80-86 7 p.

Research output: Contribution to journalArticle

  • 14 Citations (Scopus)

    ASM GaN: industry standard model for GaN RF and power devices - part-II: modeling of charge trapping

    Albahrani, S. A., Mahajan, D., Hodges, J., Chauhan, Y. S. & Khandelwal, S., Jan 2019, In : IEEE Transactions on Electron Devices. 66, 1, p. 87-94 8 p.

    Research output: Contribution to journalArticle

  • 8 Citations (Scopus)

    Design methodology considering evolution of statistical corners under long term degradation

    Eslahi, H., Mahajan, D., Albahrani, S. A. & Khandelwal, S., Sep 2019, In : Microelectronics Journal. 91, p. 36-41 6 p.

    Research output: Contribution to journalArticle

  • Modeling of the impact of the substrate voltage on the capacitances of GaN-on-Si HEMTs

    Albahrani, S. A., Mahajan, D., Moench, S., Reiner, R., Waltereit, P., Schwantuschke, D. & Khandelwal, S., Dec 2019, In : IEEE Transactions on Electron Devices. 66, 12, p. 5103-5110 8 p.

    Research output: Contribution to journalArticle

  • Impact of p-GaN layer doping on switching performance of enhancement mode GaN devices

    Mahajan, D. & Khandelwal, S., 2018, 2018 IEEE 19th Workshop on Control and Modeling for Power Electronics (COMPEL). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 1-4 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

  • 4 Citations (Scopus)