• 1817 Citations
  • 21 h-Index
20072020

Research output per year

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Research Outputs

Characterization of thermal and trapping time constants in a GaN HEMT

Kellogg, K., Khandelwal, S., Dunleavy, L. & Wang, J., 2020, 2020 94th ARFTG Microwave Measurement Conference: RF to Millimeter-Wave Measurement Techniques for 5G and Beyond. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

  • Consistent surface-potential-based modeling of drain and gate currents in AlGaN/GaN HEMTs

    Albahrani, S. A., Heuken, L., Schwantuschke, D., Gneiting, T., Burghartz, J. N. & Khandelwal, S., Feb 2020, In : IEEE Transactions on Electron Devices. 67, 2, p. 455-462 8 p.

    Research output: Contribution to journalArticle

  • 1 Citation (Scopus)

    Physics-oriented device model for packaged GaN devices

    Mahajan, D. D., Albahrani, S. A., Sodhi, R., Eguchi, T. & Khandelwal, S., Jun 2020, In : IEEE Transactions on Power Electronics. 35, 6, p. 6332-6339 8 p.

    Research output: Contribution to journalArticle

  • Validation of the industry-standard ASM-GaN model for gate-length scaling

    Albahrani, S. A., Hodges, J., Heuken, L., Schwantuschke, D., Gneiting, T., Burghartz, J. N. & Khandelwal, S., 2020, 2020 4th Australian Microwave Symposium (AMS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

  • A computationally efficient modelling methodology for field-plates in GaN HEMTs

    Hodges, J., Albahrani, S. A. & Khandelwal, S., 2019, 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 4 p.

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution