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Dive into the research topics where Sourabh Khandelwal is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Investigation of GaN-HEMT model as ASM-HEMT model for SEI GaN-HEMT which represents transient response and IMD behavior
Khandelwal, S. & Yamamoto, H.
1/11/21 → 30/04/23
Project: Research
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MQSN 21: The Philosopher's Stone of Microwave Transistor Modelling - Extrapolation
Heimlich, M., Khandelwal, S. & Parker, A.
30/08/21 → 30/11/21
Project: Research
Research Outputs
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Advanced SPICE model for GaN HEMTs (ASM-HEMT): a new industry-standard compact model for GaN-based power and RF circuit design
Khandelwal, S., 2022, Cham: Springer, Springer Nature. 188 p.Research output: Book/Report › Book › peer-review
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Accurate non-linear large signal physics-based modeling for Ka-band GaN power amplifier design with ASM-HEMT
Hodges, J., Albahrani, S. A., Schwitter, B. & Khandelwal, S., 2021, 2021 IEEE/MTT-S International Microwave Symposium. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 349-351 3 p.Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review
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An accurate compact model for GaN power switches with the physics-based ASM-HEMT model
Khandelwal, S., Labrecque, M., Huang, Y., Qi, F., Wang, Z., Smith, P., Wu, Y. & Lal, R., 2021, 2021 IEEE Applied Power Electronics Conference and Exposition (APEC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 2389-2392 4 p.Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review
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Analysis and modeling of OFF-state hysteretic losses in GaN power HEMTs
Mahajan, D. D. & Khandelwal, S., Jun 2021, In: Solid-State Electronics. 180, p. 1-10 10 p., 107995.Research output: Contribution to journal › Article › peer-review
1 Citation (Scopus) -
Analysis and modeling of temperature dependence of I-V behavior in silicon carbide MOSFETs
Bavi, D., Brooks, B. & Khandelwal, S., 2021, Proceedings of 2021 21st International Symposium on Power Electronics (Ee). Katić, V. (ed.). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 4 p.Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review
Impacts
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ASM-HEMT Compact Model for GaN RF and Power Devices
Sourabh Khandelwal (Participant)
Impact: Technology impacts