• 1549 Citations
  • 20 h-Index
20072019
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Fingerprint Dive into the research topics where Sourabh Khandelwal is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 7 Similar Profiles
High electron mobility transistors Engineering & Materials Science
Surface potential Engineering & Materials Science
Capacitance Engineering & Materials Science
Transistors Engineering & Materials Science
Physics Engineering & Materials Science
Drain current Engineering & Materials Science
Electric potential Engineering & Materials Science
Field effect transistors Engineering & Materials Science

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Research Outputs 2007 2019

Analog neuromorphic system based on multi input floating gate MOS neuron model

Tripathi, A., Arabizadeh, M., Khandelwal, S. & Thakur, C. S., 2019, 2019 IEEE International Symposium on Circuits and Systems (ISCAS): proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 5 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearchpeer-review

Neurons
Learning systems
Transistors
Neural networks
Circuit simulation

ASM GaN: industry standard model for GaN RF and power devices - part-II: modeling of charge trapping

Albahrani, S. A., Mahajan, D., Hodges, J., Chauhan, Y. S. & Khandelwal, S., Jan 2019, In : IEEE Transactions on Electron Devices. 66, 1, p. 87-94 8 p.

Research output: Contribution to journalArticleResearchpeer-review

Charge trapping
High electron mobility transistors
Industry
Electric potential
Field effect transistors

Design methodology considering evolution of statistical corners under long term degradation

Eslahi, H., Mahajan, D., Albahrani, S. A. & Khandelwal, S., Sep 2019, In : Microelectronics Journal. 91, p. 36-41 6 p.

Research output: Contribution to journalArticleResearchpeer-review

methodology
degradation
Degradation
Circuit simulation
Networks (circuits)

Analysis of low-frequency noise characterisation set-up for electronic devices

Hodges, J. T., Heimlich, M. & Khandelwal, S., 2018, 2018 Australian Microwave Symposium (AMS): 6th - 7th February, 2018, Brisbane, Australia: conference proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 39-40 2 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearchpeer-review

low frequencies
noise measurement
electronics
quantitative analysis
Chemical analysis

ASM-HEMT: industry standard GaN HEMT model for power and RF applications (invited paper)

Ghosh, S., Ahsan, S. A., Khandelwal, S., Pampori, A., Dangi, R. & Chauhan, Y. S., 13 May 2018, TechConnect briefs 2018: informatics, electronics and microsystems. Laudon, M. & Romanowicz, B. (eds.). Danville: TechConnect, Vol. 4. p. 236-239 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearchpeer-review

Open Access
SPICE
High electron mobility transistors
Industry
Surface potential
Two dimensional electron gas