Projects per year
Fingerprint
Dive into the research topics where Sourabh Khandelwal is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
- 1 Similar Profiles
Collaborations and top research areas from the last five years
Recent external collaboration on country/territory level. Dive into details by clicking on the dots or
-
File
-
Investigation of GaN-HEMT model as ASM-HEMT model for SEI GaN-HEMT which represents transient response and IMD behavior
Khandelwal, S. & Yamamoto, H.
1/11/21 → 30/04/23
Project: Research
-
MQSN 21: The Philosopher's Stone of Microwave Transistor Modelling - Extrapolation
Heimlich, M., Khandelwal, S. & Parker, A.
30/08/21 → 30/11/21
Project: Research
-
Accurate non-linear harmonic simulations at X-band using the ASM-HEMT model validated with NVNA measurements
Miller, N. C., Davis, D. T., Khandelwal, S., Sischka, F., Gilbert, R., Elliott, M., Fitch, R. C., Liddy, K. J., Green, A. J., Werner, E., Walker, D. E. & Chabak, K. D., 2022, Proceedings of the 2022 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 11-13 3 p.Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review
4 Citations (Scopus) -
Advanced SPICE model for GaN HEMTs (ASM-HEMT): a new industry-standard compact model for GaN-based power and RF circuit design
Khandelwal, S., 2022, Cham, Switzerland: Springer, Springer Nature. 188 p.Research output: Book/Report › Book › peer-review
4 Citations (Scopus) -
A physically-based model of vertical TFET-part II: drain current model
Cheng, Q., Khandelwal, S. & Zeng, Y., Jul 2022, In: IEEE Transactions on Electron Devices. 69, 7, p. 3974-3982 9 p.Research output: Contribution to journal › Article › peer-review
2 Citations (Scopus) -
A physics-based model of vertical TFET-part I: modeling of electric potential
Cheng, Q., Khandelwal, S. & Zeng, Y., Jul 2022, In: IEEE Transactions on Electron Devices. 69, 7, p. 3966-3973 8 p.Research output: Contribution to journal › Article › peer-review
-
ASM-ESD - a comprehensive physics-based compact model for ESD Diodes
Khandelwal, S. & Bavi, D., 2022, 2022 IEEE International Reliability Physics Symposium (IRPS): proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 5C.1-1-5C.1-6 6 p.Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution
1 Citation (Scopus)
Impacts
-
ASM-HEMT Compact Model for GaN RF and Power Devices
Sourabh Khandelwal (Participant)
Impact: Technology impacts