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Dive into the research topics where Sourabh Khandelwal is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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Projects
- 3 Finished
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Investigation of GaN-HEMT model as ASM-HEMT model for SEI GaN-HEMT which represents transient response and IMD behavior
Khandelwal, S. (Primary Chief Investigator) & Yamamoto, H. (Chief Investigator)
1/11/21 → 30/04/23
Project: Research
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MQSN 21: The Philosopher's Stone of Microwave Transistor Modelling - Extrapolation
Heimlich, M. (Primary Chief Investigator), Khandelwal, S. (Chief Investigator) & Parker, T. (Chief Investigator)
30/08/21 → 30/11/21
Project: Research
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ASM Model Research Development and Support
Khandelwal, S. (Primary Chief Investigator)
1/01/21 → 31/12/23
Project: Research
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A multi-stage neural network I-V and C-V BSIM-CMG model global parameter extractor for advanced GAAFET technologies
Chen, J. H., Chavez, F., Tung, C.-T., Khandelwal, S. & Hu, C., Jun 2025, In: Solid-State Electronics. 226, p. 1-7 7 p., 109081.Research output: Contribution to journal › Article › peer-review
5 Link opens in a new tab Citations (Scopus) -
Application of artificial intelligence for modeling SiC Power MOSFETs
Chavez, F., Bavi, D. & Khandelwal, S., 2025, 2025 IEEE Applied Power Electronics Conference and Exposition (APEC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 385-388 4 p.Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review
1 Link opens in a new tab Citation (Scopus) -
Application of explainable AI on deep learning-based gate length scalable IV parameter extractor for BSIM-IMG
Chavez, F., Chen, J.-H., Tung, C.-T., Hu, C. & Khandelwal, S., Nov 2025, In: Solid-State Electronics. 229, p. 1-9 9 p., 109154.Research output: Contribution to journal › Article › peer-review
Open AccessFile1 Link opens in a new tab Citation (Scopus)4 Downloads (Pure) -
Deep learning-based ASM-ESD forward I-V parameter extraction
Chavez, F. & Khandelwal, S., 2025, Proceedings of the Twenty Sixth International Symposium on Quality Electronic Design ISQED 2025. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 302 1 p.Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review
2 Link opens in a new tab Citations (Scopus) -
A neural network-based manufacturing variability modeling of GaN HEMTs
Chavez, F., Bavi, D., Miller, N. C. & Khandelwal, S., 2024, 2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS): conference proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 4 p. 8.3Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review
4 Link opens in a new tab Citations (Scopus)
Impacts
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ASM-HEMT Compact Model for GaN RF and Power Devices
Khandelwal, S. (Participant)
Impact: Technology impacts