• 1003 Citations
  • 16 h-Index
1987 …2019
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Fingerprint Dive into the research topics where Tony Parker is active. These topic labels come from the works of this person. Together they form a unique fingerprint.

  • 6 Similar Profiles
High electron mobility transistors Engineering & Materials Science
Field effect transistors Engineering & Materials Science
Intermodulation Engineering & Materials Science
field effect transistors Physics & Astronomy
Networks (circuits) Engineering & Materials Science
Intermodulation distortion Engineering & Materials Science
high electron mobility transistors Physics & Astronomy
intermodulation Physics & Astronomy

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Projects 2006 2019

Research Outputs 1987 2018

A folded edge-coupled transformer balun in GaAs with excellent balance from 9 to 20 GHz

Chakraborty, S., Milner, L. E., Parker, A. & Heimlich, M., 2018, 2018 48th European Microwave Conference proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 1101-1104 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearchpeer-review

transformers
Equivalent circuits
Bandwidth
equivalent circuits
Fabrication

Characterisation of GaAs pHEMT transient thermal response

Schwitter, B. K., Parker, A. E., Mahon, S. J. & Heimlich, M. C., 2018, 2018 13th European Microwave Integrated Circuits Conference proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 218-221 4 p.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearchpeer-review

scale models
temperature measurement
radiant flux density
Heating
optimization

A 30-60 GHz SiGe transformer balun with offset radii coils for low amplitude and phase imbalance

Chakraborty, S., Milner, L. E., Hall, L. T., Parker, A. & Heimlich, M., 4 Oct 2017, 2017 IEEE MTT-S International Microwave Symposium (IMS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), p. 1278-1281 4 p. 8058842

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearchpeer-review

Insertion losses
transformers
coils
insertion loss
radii

Circuit model for double-energy-level trap centers in GaN HEMTs

Albahrani, S. A., Parker, A. & Heimlich, M., Mar 2017, In : IEEE Transactions on Electron Devices. 64, 3, p. 998-1006 9 p.

Research output: Contribution to journalArticleResearchpeer-review

Extraction of a trapping model over an extended bias range for GaN and GaAs HEMTs

Tarazi, J., Rathmell, J. G., Parker, A. E. & Mahon, S. J., 4 Oct 2017, 2017 IEEE MTT-S International Microwave Symposium (IMS). Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers (IEEE), p. 244-247 4 p. 8059086

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearchpeer-review

High electron mobility transistors
high electron mobility transistors
time constant
trapping
traps