Abstract
本公开提供了用于加工硅基光伏器件的方法。具体来说,本公开涉及在制造光伏器件期间使用氢来钝化硅中的缺陷并解决光致劣化。本公开中的方法利用在中性或带电状态下生成并操纵氢以优化缺陷钝化。其中一些方法公开了使用热处理,利用子带隙光子照射硅中的电场或缺陷,来控制电荷或氢的状态,将氢移动至器件中的不同位置或将氢保留在特定位置处。
The present invention provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or chargedstate to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the stateof charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.
The present invention provides methodologies for manufacturing photovoltaic devices. In particular, the disclosure relates to the use of hydrogen during manufacturing of photovoltaic devices for passivating defects in the silicon and addressing light-induced degradation. The methodologies in the present disclosures take advantage of generation and manipulation of hydrogen in the neutral or chargedstate to optimise defect passivation. Some of the methodologies disclose use thermal treatments, illumination with sub-bandgap photons, electric fields or defects in the silicon to control the stateof charge or hydrogen, move hydrogen to different locations in the device or retain hydrogen at specific locations.
| Translated title of the contribution | Advanced hydrogen passivation that mitigates hydrogen-induced recombination (HIR) and surface passivation deterioration in PV devices |
|---|---|
| Original language | Chinese (Simplified) |
| Patent number | 109983561 |
| IPC | H01L 21/30,H01L 21/324 |
| Priority date | 22/11/16 |
| Publication status | Published - 14 Jul 2023 |
| Externally published | Yes |
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Advanced hydrogen passivation that mitigates hydrogen-induced recombination (HIR) and surface passivation deterioration in PV devices
Wenham, S. R. (Inventor), Ciesla, A. (Inventor), Bagnall, D. (Inventor), Chen, R. (Inventor), Abbott, M. D. (Inventor), Hallam, B. J. (Inventor), Chan, C. E. (Inventor), Chong, C. M. (Inventor), Chen, D. (Inventor), Payne, D. N. (Inventor), Mai, L. (Inventor), Kim, M. (Inventor), Fung, T. H. (Inventor) & Shi, Z. (Inventor), 31 May 2018, (Submitted) IPC No. H01L 21/30, H01L 21/324, Patent No. AU2017363826, Priority date 22 Nov 2016, Priority No. AU2016904784Research output: Patent
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