0.1-μm GaAs PHEMT W-band low noise amplifier MMIC using coplanar waveguide technology

Alex Bessemoulin, Jabra Tarazi, MacCrae G. McCulloch, Simon J. Mahon

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

7 Citations (Scopus)

Abstract

This paper presents the performance of a first pass design W-band low noise amplifier MMIC, based on coplanar waveguide (CPW) technology, and utilising 100-nm gate-length GaAs pseudomorphic power HEMTs. With a chip size of less than 1.4 mm2, this two-stage LNA achieves an average small signal gain of 12 dB between 80 and 100 GHz. The measured noise figure averages 5 dB up to 94 GHz. To the author knowledge, this performance is one of the very few reported for W-band LNAs fabricated in commercially available foundry process. It is also comparable to the best results reported with more advanced InP or Metamorphic HEMT low noise technologies.

Original languageEnglish
Title of host publicationAMS 2014
Subtitle of host publication2014 1st Australian Microwave Symposium, Conference Proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-2
Number of pages2
ISBN (Electronic)9781479955411
DOIs
Publication statusPublished - 20 Jan 2014
Externally publishedYes
Event1st Australian Microwave Symposium AMS - Melbourne, Australia
Duration: 26 Jun 201427 Jun 2014

Conference

Conference1st Australian Microwave Symposium AMS
CountryAustralia
CityMelbourne
Period26/06/1427/06/14

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