Abstract
The design and measured performance of an unconditionally stable 1 to 105 GHz distributed amplifier is presented. Fabricated in a commercial 0.1 μ m GaAs process, it delivers more than 10 dB small signal gain across the 105 GHz band and more than 15 dBm output power to 90 GHz. To the author's knowledge, the amplifier has the broadest gain bandwidth reported to date in a GaAs process, and using gain BW/ fmax and P1BW/ fmax figures-of-merit, this GaAs design exceeds, or is comparable to, the performance of other state-of-the-art designs in SOI, SiGe, InP, InGaAs and GaN.
| Original language | English |
|---|---|
| Title of host publication | 2025 20th European Microwave Integrated Circuits Conference proceedings |
| Place of Publication | Piscataway, NJ |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 186-189 |
| Number of pages | 4 |
| ISBN (Electronic) | 9782874870828 |
| ISBN (Print) | 9798331512675 |
| DOIs | |
| Publication status | Published - 2025 |
| Event | 20th European Microwave Integrated Circuits Conference, EuMIC 2025 - Utrecht, Netherlands Duration: 22 Sept 2025 → 23 Sept 2025 |
Conference
| Conference | 20th European Microwave Integrated Circuits Conference, EuMIC 2025 |
|---|---|
| Country/Territory | Netherlands |
| City | Utrecht |
| Period | 22/09/25 → 23/09/25 |
Keywords
- GaAs
- stacked-FET
- distributed amplifier
- W-band
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