120 GHz GaAs single-balanced mixer

Nethini Weerathunge, Simon J. Mahon, Gerry McCulloch, Sudipta Chakraborty

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

This paper presents a resistive down-conversion single-balanced mixer in WIN semiconductor's 0.1 μmGaAs process. This mixer operates within the low terahertz region up to a frequency of 120 GHz. The measured upper-side band conversion loss is lower than 12.2 dB up to 115 GHz and lower than 14.4 dB up to 120 GHz at a fixed LO frequency of 110 GHz. The LO-RF isolation of the mixer is further enhanced using a selective drain biasing technique, which is demonstrated for the first time in the low terahertz region. The article also includes the first demonstration of phase and magnitude imbalances between the two output IF signals at these low terahertz frequencies, which are measured to be less than 7.6° and 0.41 dB, respectively, within an IF frequency range of 1–8 GHz.
Original languageEnglish
Title of host publication2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages229-232
Number of pages4
ISBN (Electronic)9798350307641
ISBN (Print)9798350307658
DOIs
Publication statusPublished - 2023
Event2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023 - Monterey, United States
Duration: 16 Oct 202318 Oct 2023

Publication series

Name
ISSN (Print)2831-4972
ISSN (Electronic)2831-4999

Conference

Conference2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023
Country/TerritoryUnited States
CityMonterey
Period16/10/2318/10/23

Keywords

  • Low terahertz
  • single-balanced mixer
  • power amplifier
  • down-conversion
  • gallium arsenide
  • isolation
  • imbalances

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