@inproceedings{cb5bf66c8c3742dd8a17f9f9e610d8e7,
title = "120 GHz GaAs single-balanced mixer",
abstract = "This paper presents a resistive down-conversion single-balanced mixer in WIN semiconductor's 0.1 μmGaAs process. This mixer operates within the low terahertz region up to a frequency of 120 GHz. The measured upper-side band conversion loss is lower than 12.2 dB up to 115 GHz and lower than 14.4 dB up to 120 GHz at a fixed LO frequency of 110 GHz. The LO-RF isolation of the mixer is further enhanced using a selective drain biasing technique, which is demonstrated for the first time in the low terahertz region. The article also includes the first demonstration of phase and magnitude imbalances between the two output IF signals at these low terahertz frequencies, which are measured to be less than 7.6° and 0.41 dB, respectively, within an IF frequency range of 1–8 GHz.",
keywords = "Low terahertz, single-balanced mixer, power amplifier, down-conversion, gallium arsenide, isolation, imbalances",
author = "Nethini Weerathunge and Mahon, \{Simon J.\} and Gerry McCulloch and Sudipta Chakraborty",
year = "2023",
doi = "10.1109/BCICTS54660.2023.10310814",
language = "English",
isbn = "9798350307658",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "229--232",
booktitle = "2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)",
address = "United States",
note = "2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023 ; Conference date: 16-10-2023 Through 18-10-2023",
}