20 W passive mode-locked picosecond oscillator

Zhen Ao Bai, Zhong Wei Fan, Fu Qiang Lian, Zhen Xu Bai, Zhi Jun Kan, Jing Zhang

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearchpeer-review

Abstract

Detail studies on the 888 nm laser diode (LD) pumped Nd:YVO4 crystal was reported to reduce the absorption coefficient and improve thermal performance of the laser, which could generate high power mode-locked pulses output easily. The mode-locking operation was induced by a semiconductor saturable absorber mirror (SESAM). When pumping power is 65 W, the maximum output power of 20 W is obtained at repetition rate of 63.5 MHz with the optical-optical conversion efficiency of 30.8% and pulse width of 45 ps.

LanguageEnglish
Title of host publicationAdvanced optical manufacturing technologies
Subtitle of host publication7th International Symposium on Advanced Optical Manufacturing and Testing Technologies
EditorsLi Yang, Eric Ruch, Shengyi Li
Place of PublicationWashington, DC
PublisherSPIE
Pages1-6
Number of pages6
ISBN (Electronic)9781628413564
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, AOMATT 2014 - Harbin, China
Duration: 26 Apr 201429 Apr 2014

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume9281
ISSN (Electronic)0277-786X

Other

Other7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, AOMATT 2014
CountryChina
CityHarbin
Period26/04/1429/04/14

Fingerprint

Semiconductor saturable absorber mirrors
Laser mode locking
Laser modes
Conversion efficiency
Semiconductor lasers
Laser pulses
oscillators
Diode-pumped Lasers
Saturable Absorber
Mode-locking
Crystals
Lasers
Absorption Coefficient
output
Output
High Power
locking
Semiconductors
repetition
absorbers

Keywords

  • 888 nm
  • laser technique
  • mode-locked
  • picosecond pulse

Cite this

Bai, Z. A., Fan, Z. W., Lian, F. Q., Bai, Z. X., Kan, Z. J., & Zhang, J. (2014). 20 W passive mode-locked picosecond oscillator. In L. Yang, E. Ruch, & S. Li (Eds.), Advanced optical manufacturing technologies: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies (pp. 1-6). [92812M] (Proceedings of SPIE; Vol. 9281). Washington, DC: SPIE. https://doi.org/10.1117/12.2067781
Bai, Zhen Ao ; Fan, Zhong Wei ; Lian, Fu Qiang ; Bai, Zhen Xu ; Kan, Zhi Jun ; Zhang, Jing. / 20 W passive mode-locked picosecond oscillator. Advanced optical manufacturing technologies: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies. editor / Li Yang ; Eric Ruch ; Shengyi Li. Washington, DC : SPIE, 2014. pp. 1-6 (Proceedings of SPIE).
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abstract = "Detail studies on the 888 nm laser diode (LD) pumped Nd:YVO4 crystal was reported to reduce the absorption coefficient and improve thermal performance of the laser, which could generate high power mode-locked pulses output easily. The mode-locking operation was induced by a semiconductor saturable absorber mirror (SESAM). When pumping power is 65 W, the maximum output power of 20 W is obtained at repetition rate of 63.5 MHz with the optical-optical conversion efficiency of 30.8{\%} and pulse width of 45 ps.",
keywords = "888 nm, laser technique, mode-locked, picosecond pulse",
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Bai, ZA, Fan, ZW, Lian, FQ, Bai, ZX, Kan, ZJ & Zhang, J 2014, 20 W passive mode-locked picosecond oscillator. in L Yang, E Ruch & S Li (eds), Advanced optical manufacturing technologies: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies., 92812M, Proceedings of SPIE, vol. 9281, SPIE, Washington, DC, pp. 1-6, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, AOMATT 2014, Harbin, China, 26/04/14. https://doi.org/10.1117/12.2067781

20 W passive mode-locked picosecond oscillator. / Bai, Zhen Ao; Fan, Zhong Wei; Lian, Fu Qiang; Bai, Zhen Xu; Kan, Zhi Jun; Zhang, Jing.

Advanced optical manufacturing technologies: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies. ed. / Li Yang; Eric Ruch; Shengyi Li. Washington, DC : SPIE, 2014. p. 1-6 92812M (Proceedings of SPIE; Vol. 9281).

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionResearchpeer-review

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AB - Detail studies on the 888 nm laser diode (LD) pumped Nd:YVO4 crystal was reported to reduce the absorption coefficient and improve thermal performance of the laser, which could generate high power mode-locked pulses output easily. The mode-locking operation was induced by a semiconductor saturable absorber mirror (SESAM). When pumping power is 65 W, the maximum output power of 20 W is obtained at repetition rate of 63.5 MHz with the optical-optical conversion efficiency of 30.8% and pulse width of 45 ps.

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Bai ZA, Fan ZW, Lian FQ, Bai ZX, Kan ZJ, Zhang J. 20 W passive mode-locked picosecond oscillator. In Yang L, Ruch E, Li S, editors, Advanced optical manufacturing technologies: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies. Washington, DC: SPIE. 2014. p. 1-6. 92812M. (Proceedings of SPIE). https://doi.org/10.1117/12.2067781