Abstract
A two-stage, balanced Ka-band power amplifier MMIC implemented in a gallium nitride process is presented. The MMIC was fabricated using a commercial 0.15 μm GaN process with a ft of 35 GHz. The maximum measured output power is 15.5 W and the maximum measured PAE is 21.6%. The output power density of 1.53 W/mm2, achieved at a frequency 80% of the process ft, compares favorably with the recent GaN PAs on a 100 μm thick SiC substrate at Ka-band.
| Original language | English |
|---|---|
| Title of host publication | 2023 5th Australian Microwave Symposium (AMS) |
| Place of Publication | Piscataway, NJ |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 37-38 |
| Number of pages | 2 |
| ISBN (Electronic) | 9798350399363 |
| ISBN (Print) | 9798350399370 |
| DOIs | |
| Publication status | Published - 2023 |
| Event | 5th Australian Microwave Symposium, AMS 2023 - Melbourne, Australia Duration: 16 Feb 2023 → 17 Feb 2023 |
Conference
| Conference | 5th Australian Microwave Symposium, AMS 2023 |
|---|---|
| Country/Territory | Australia |
| City | Melbourne |
| Period | 16/02/23 → 17/02/23 |
Keywords
- Power amplifier
- Gallium nitride
- Ka-band
- MMIC
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