A 15-watt Ka-band power amplifier in 0.15 μm gallium nitride process

Sudipta Chakraborty*, Leigh E. Milner, Simon J. Mahon, Benny Wu, Michael C. Heimlich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

A two-stage, balanced Ka-band power amplifier MMIC implemented in a gallium nitride process is presented. The MMIC was fabricated using a commercial 0.15 μm GaN process with a ft of 35 GHz. The maximum measured output power is 15.5 W and the maximum measured PAE is 21.6%. The output power density of 1.53 W/mm2, achieved at a frequency 80% of the process ft, compares favorably with the recent GaN PAs on a 100 μm thick SiC substrate at Ka-band.

Original languageEnglish
Title of host publication2023 5th Australian Microwave Symposium (AMS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages37-38
Number of pages2
ISBN (Electronic)9798350399363
ISBN (Print)9798350399370
DOIs
Publication statusPublished - 2023
Event5th Australian Microwave Symposium, AMS 2023 - Melbourne, Australia
Duration: 16 Feb 202317 Feb 2023

Conference

Conference5th Australian Microwave Symposium, AMS 2023
Country/TerritoryAustralia
CityMelbourne
Period16/02/2317/02/23

Keywords

  • Power amplifier
  • Gallium nitride
  • Ka-band
  • MMIC

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