A 3-5 GHz LNA in 0.25μm SOI CMOS process for implantable WBANs

Ayobami Iji*, Xi Zhu, Michael Heimlich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

12 Citations (Scopus)

Abstract

A low-voltage, low-power single-ended LNA is implemented in a 0.25μm SOI CMOS technology. A theoretical basis for the design is used to develop design constraints in conjunction with a layout-aware design flow providing early insight into parasitic effects. The SOI CMOS LNA has a post-layout simulated noise figure of less than 3 dB; input IP3 of -10 dBm and small-signal gain of 19.2 dB within the 3-5 GHz band. Total current consumption is 5.2 mA from 1.5 V supply voltage. The LNA can also operate under a 1V supply voltage with relatively small linear performance degradation. The chip area is 0.89 mm 2. Due to the high-resistivity silicon substrate, buried oxide isolation and low threshold voltage, the SOI CMOS technology offers significant performance improvements for LNAs, which makes the designed LNA well suitable for implantable WBANs.

Original languageEnglish
Title of host publication2012 IEEE 55th International Midwest Symposium on Circuits and Systems, MWSCAS 2012
Place of PublicationPiscataway, N.J
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages766-769
Number of pages4
ISBN (Electronic)9781467325271
ISBN (Print)9781467325264
DOIs
Publication statusPublished - 2012
Event2012 IEEE 55th International Midwest Symposium on Circuits and Systems, MWSCAS 2012 - Boise, ID, United States
Duration: 5 Aug 20128 Aug 2012

Other

Other2012 IEEE 55th International Midwest Symposium on Circuits and Systems, MWSCAS 2012
CountryUnited States
CityBoise, ID
Period5/08/128/08/12

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    Iji, A., Zhu, X., & Heimlich, M. (2012). A 3-5 GHz LNA in 0.25μm SOI CMOS process for implantable WBANs. In 2012 IEEE 55th International Midwest Symposium on Circuits and Systems, MWSCAS 2012 (pp. 766-769). [6292133] Piscataway, N.J: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/MWSCAS.2012.6292133