A 39 GHz Power Amplifier in 0.15 μm GaN

Van Dung Tran*, Sudipta Chakraborty, Leigh E. Milner, Simon Mahon, Michael Heimlich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.

Original languageEnglish
Title of host publication2020 4th Australian Microwave Symposium (AMS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-2
Number of pages2
ISBN (Electronic)9781728110493
ISBN (Print)9781728110509
DOIs
Publication statusPublished - 2020
Event4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia
Duration: 13 Feb 202014 Feb 2020

Conference

Conference4th Australian Microwave Symposium, AMS 2020
CountryAustralia
CitySydney
Period13/02/2014/02/20

Keywords

  • GaN
  • MMIC
  • Power Amplifiers

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  • Cite this

    Tran, V. D., Chakraborty, S., Milner, L. E., Mahon, S., & Heimlich, M. (2020). A 39 GHz Power Amplifier in 0.15 μm GaN. In 2020 4th Australian Microwave Symposium (AMS) (pp. 1-2). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/AMS48904.2020.9059531