A 39 GHz Power Amplifier in 0.15 μm GaN

Van Dung Tran*, Sudipta Chakraborty, Leigh E. Milner, Simon Mahon, Michael Heimlich

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review


In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.

Original languageEnglish
Title of host publication2020 4th Australian Microwave Symposium (AMS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Electronic)9781728110493
ISBN (Print)9781728110509
Publication statusPublished - 2020
Event4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia
Duration: 13 Feb 202014 Feb 2020


Conference4th Australian Microwave Symposium, AMS 2020


  • GaN
  • MMIC
  • Power Amplifiers


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