A 39 GHz Power Amplifier in 0.15 μm GaN

Van Dung Tran; Sudipta Chakraborty; Leigh E. Milner; Simon Mahon; Michael Heimlich

doi:10.1109/AMS48904.2020.9059531

A 39 GHz Power Amplifier in 0.15 μm GaN

Van Dung Tran^*, Sudipta Chakraborty, Leigh E. Milner, Simon Mahon, Michael Heimlich

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.

Original language	English
Title of host publication	2020 4th Australian Microwave Symposium (AMS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781728110493
ISBN (Print)	9781728110509
DOIs	https://doi.org/10.1109/AMS48904.2020.9059531
Publication status	Published - 2020
Event	4th Australian Microwave Symposium, AMS 2020 - Sydney, Australia Duration: 13 Feb 2020 → 14 Feb 2020

Conference

Conference	4th Australian Microwave Symposium, AMS 2020
Country/Territory	Australia
City	Sydney
Period	13/02/20 → 14/02/20

Keywords

GaN
MMIC
Power Amplifiers

Access to Document

10.1109/AMS48904.2020.9059531

Cite this

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title = "A 39 GHz Power Amplifier in 0.15 μm GaN",

abstract = "In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.",

keywords = "GaN, MMIC, Power Amplifiers",

author = "Tran, {Van Dung} and Sudipta Chakraborty and Milner, {Leigh E.} and Simon Mahon and Michael Heimlich",

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booktitle = "2020 4th Australian Microwave Symposium (AMS)",

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AU - Chakraborty, Sudipta

AU - Milner, Leigh E.

AU - Mahon, Simon

AU - Heimlich, Michael

PY - 2020

Y1 - 2020

N2 - In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.

AB - In this paper, a 39 GHz power amplifier (PA) implemented in WIN Semiconductor's newly released 0.15 μm GaN HEMT process is presented. The load-pull simulation for power at 39 GHz for a 4×100 gate width transistor is also shown. The electromagnetic (EM) simulation of the designed two-stage PA shows a power gain of 17 dB at 39 GHz, 21% PAE and 31 dBm saturated output power.

KW - GaN

KW - MMIC

KW - Power Amplifiers

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U2 - 10.1109/AMS48904.2020.9059531

DO - 10.1109/AMS48904.2020.9059531

M3 - Conference proceeding contribution

AN - SCOPUS:85084182235

SN - 9781728110509

SP - 1

EP - 2

BT - 2020 4th Australian Microwave Symposium (AMS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 4th Australian Microwave Symposium, AMS 2020

Y2 - 13 February 2020 through 14 February 2020

ER -

A 39 GHz Power Amplifier in 0.15 μm GaN

Abstract

Conference

Keywords

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