A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process

Ayobami Iji; Xie Zhu; Michael Heimlich

doi:10.1109/ICUWB.2013.6663862

A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process

Ayobami Iji, Xie Zhu, Michael Heimlich

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

4 Citations (Scopus)

Abstract

For transceiver design in low cost CMOS technologies, one of the most challenging elements is the voltage controlled oscillator (VCO), especially if designed for low power. A VCO has been designed and measured where a MOS transistor is used as a varactor, as part of strategy to obtain the wide tuning range of 500MHz. Phase noise was measured and found to be -111dBc/Hz at 1MHz offset at an oscillation frequency of 3.2GHz. The VCO, implemented in 0.25μm Silicon on Sapphire (SOS) CMOS, consumes 600μW of DC power from a 1.2V source and is suitable for implantable UWB applications.

Original language	English
Title of host publication	2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	278-281
Number of pages	4
ISBN (Electronic)	9781479909698, 9781479909681
ISBN (Print)	9781479909674
DOIs	https://doi.org/10.1109/ICUWB.2013.6663862
Publication status	Published - 2013
Event	2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013 - Sydney, NSW, Australia Duration: 15 Sep 2013 → 18 Sep 2013

Other

Other	2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013
Country/Territory	Australia
City	Sydney, NSW
Period	15/09/13 → 18/09/13

Keywords

MOS varactor
wideband
low DC power
LC VCO
SOS

Access to Document

10.1109/ICUWB.2013.6663862

Cite this

Iji, A., Zhu, X., & Heimlich, M. (2013). A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process. In 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013 (pp. 278-281). [6663862] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICUWB.2013.6663862

@inproceedings{1a4cc6bdd9764b22bd5a277997b4bfdd,

title = "A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process",

abstract = "For transceiver design in low cost CMOS technologies, one of the most challenging elements is the voltage controlled oscillator (VCO), especially if designed for low power. A VCO has been designed and measured where a MOS transistor is used as a varactor, as part of strategy to obtain the wide tuning range of 500MHz. Phase noise was measured and found to be -111dBc/Hz at 1MHz offset at an oscillation frequency of 3.2GHz. The VCO, implemented in 0.25μm Silicon on Sapphire (SOS) CMOS, consumes 600μW of DC power from a 1.2V source and is suitable for implantable UWB applications.",

keywords = "MOS varactor, wideband, low DC power, LC VCO, SOS",

author = "Ayobami Iji and Xie Zhu and Michael Heimlich",

year = "2013",

doi = "10.1109/ICUWB.2013.6663862",

language = "English",

isbn = "9781479909674",

pages = "278--281",

booktitle = "2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013 ; Conference date: 15-09-2013 Through 18-09-2013",

}

Iji, A, Zhu, X & Heimlich, M 2013, A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process. in 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013., 6663862, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 278-281, 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013, Sydney, NSW, Australia, 15/09/13. https://doi.org/10.1109/ICUWB.2013.6663862

A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process. / Iji, Ayobami; Zhu, Xie; Heimlich, Michael.

2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2013. p. 278-281 6663862.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process

AU - Iji, Ayobami

AU - Zhu, Xie

AU - Heimlich, Michael

PY - 2013

Y1 - 2013

N2 - For transceiver design in low cost CMOS technologies, one of the most challenging elements is the voltage controlled oscillator (VCO), especially if designed for low power. A VCO has been designed and measured where a MOS transistor is used as a varactor, as part of strategy to obtain the wide tuning range of 500MHz. Phase noise was measured and found to be -111dBc/Hz at 1MHz offset at an oscillation frequency of 3.2GHz. The VCO, implemented in 0.25μm Silicon on Sapphire (SOS) CMOS, consumes 600μW of DC power from a 1.2V source and is suitable for implantable UWB applications.

AB - For transceiver design in low cost CMOS technologies, one of the most challenging elements is the voltage controlled oscillator (VCO), especially if designed for low power. A VCO has been designed and measured where a MOS transistor is used as a varactor, as part of strategy to obtain the wide tuning range of 500MHz. Phase noise was measured and found to be -111dBc/Hz at 1MHz offset at an oscillation frequency of 3.2GHz. The VCO, implemented in 0.25μm Silicon on Sapphire (SOS) CMOS, consumes 600μW of DC power from a 1.2V source and is suitable for implantable UWB applications.

KW - MOS varactor

KW - wideband

KW - low DC power

KW - LC VCO

KW - SOS

UR - http://www.scopus.com/inward/record.url?scp=84892536468&partnerID=8YFLogxK

U2 - 10.1109/ICUWB.2013.6663862

DO - 10.1109/ICUWB.2013.6663862

M3 - Conference proceeding contribution

AN - SCOPUS:84892536468

SN - 9781479909674

SP - 278

EP - 281

BT - 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013

Y2 - 15 September 2013 through 18 September 2013

ER -

Iji A, Zhu X, Heimlich M. A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process. In 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2013. p. 278-281. 6663862 https://doi.org/10.1109/ICUWB.2013.6663862

A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process

Abstract

Other

Keywords

Access to Document

Other files and links

Fingerprint

Cite this