A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process

Ayobami Iji, Xie Zhu, Michael Heimlich

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

3 Citations (Scopus)

Abstract

For transceiver design in low cost CMOS technologies, one of the most challenging elements is the voltage controlled oscillator (VCO), especially if designed for low power. A VCO has been designed and measured where a MOS transistor is used as a varactor, as part of strategy to obtain the wide tuning range of 500MHz. Phase noise was measured and found to be -111dBc/Hz at 1MHz offset at an oscillation frequency of 3.2GHz. The VCO, implemented in 0.25μm Silicon on Sapphire (SOS) CMOS, consumes 600μW of DC power from a 1.2V source and is suitable for implantable UWB applications.

Original languageEnglish
Title of host publication2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages278-281
Number of pages4
ISBN (Electronic)9781479909698, 9781479909681
ISBN (Print)9781479909674
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013 - Sydney, NSW, Australia
Duration: 15 Sep 201318 Sep 2013

Other

Other2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013
CountryAustralia
CitySydney, NSW
Period15/09/1318/09/13

Keywords

  • MOS varactor
  • wideband
  • low DC power
  • LC VCO
  • SOS

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    Iji, A., Zhu, X., & Heimlich, M. (2013). A 3GHz low power, MOS varactor voltage controlled oscillator for implantable ultra wideband applications in CMOS Silicon-On-Sapphire (SOS) process. In 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013 (pp. 278-281). [6663862] Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICUWB.2013.6663862