A single-FET active balun has been developed with a phase imbalance of less than ±1.5° and amplitude imbalance less than ±0.6dB from 4 to 8 GHz using 0.25μm silicon-on-sapphire CMOS. The source terminal of the transistor has been compensated with a shunt capacitance to ground and increased value for the source resistance. The compensation network has improved the phase imbalance by 29° at 8 GHz. The circuit dissipates 15mW and is 260×300μm including AC coupling capacitors.
|Title of host publication||Microelectronics|
|Subtitle of host publication||Design, Technology, and Packaging III|
|Publication status||Published - 2008|
|Event||Microelectronics: Design, Technology, and Packaging III - Canberra, ACT, Australia|
Duration: 5 Dec 2007 → 7 Dec 2007
|Other||Microelectronics: Design, Technology, and Packaging III|
|Period||5/12/07 → 7/12/07|