A 4-8 GHz CMOS active balun using a compensated single-FET topology - art. no. 679817

Leigh Milner*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

A single-FET active balun has been developed with a phase imbalance of less than +/- 1.5 degrees and amplitude imbalance less than +/- 0.6dB from 4 to 8 GHz using 0.25 mu m silicon-on-sapphire CMOS. The source terminal of the transistor has been compensated with a shunt capacitance to ground and increased value for the source resistance. The compensation network has improved the phase imbalance by 29 degrees at 8 GHz. The circuit dissipates 15mW and is 260x300 mu m including AC coupling capacitors.

Original languageEnglish
Title of host publicationMicroelectronics: design, technology, and packaging III
EditorsAJ Hariz, VK Varadan
Place of PublicationWashinton, US
PublisherSPIE
Pages79817-79817
Number of pages5
ISBN (Print)9780819469694
Publication statusPublished - 2008
Externally publishedYes
EventConference on Microelectronics - Design, Technology and Packaging III - Canberra, Australia
Duration: 5 Dec 20077 Dec 2007

Publication series

NamePROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)
PublisherSPIE-INT SOC OPTICAL ENGINEERING
Volume6798
ISSN (Print)0277-786X

Conference

ConferenceConference on Microelectronics - Design, Technology and Packaging III
CountryAustralia
CityCanberra
Period5/12/077/12/07

Cite this

Milner, L. (2008). A 4-8 GHz CMOS active balun using a compensated single-FET topology - art. no. 679817. In AJ. Hariz, & VK. Varadan (Eds.), Microelectronics: design, technology, and packaging III (pp. 79817-79817). (PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE); Vol. 6798). Washinton, US: SPIE.