@inproceedings{ce57212d36e4475b90ceaabe6456b096,
title = "A 4-8 GHz CMOS active balun using a compensated single-FET topology - art. no. 679817",
abstract = "A single-FET active balun has been developed with a phase imbalance of less than +/- 1.5 degrees and amplitude imbalance less than +/- 0.6dB from 4 to 8 GHz using 0.25 mu m silicon-on-sapphire CMOS. The source terminal of the transistor has been compensated with a shunt capacitance to ground and increased value for the source resistance. The compensation network has improved the phase imbalance by 29 degrees at 8 GHz. The circuit dissipates 15mW and is 260x300 mu m including AC coupling capacitors.",
author = "Leigh Milner",
year = "2008",
language = "English",
isbn = "9780819469694",
series = "PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)",
publisher = "SPIE",
pages = "79817--79817",
editor = "AJ Hariz and VK Varadan",
booktitle = "Microelectronics: design, technology, and packaging III",
address = "United States",
note = "Conference on Microelectronics - Design, Technology and Packaging III ; Conference date: 05-12-2007 Through 07-12-2007",
}