A 40-60 GHz driver amplifier implemented in 0.1 μm gallium arsenide process

Quoc Toan Chau*, Sudipta Chakraborty, Nethini Imiyage

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

The design of a broadband driver amplifier between 40-60 GHz is presented in this paper. The amplifier is implemented in 0.1 μm gallium arsenide process from Win Semiconductors. The amplifier achieves a measured gain of 15.5 dB at a nominal bias. The measured gain flatness is within 1 dB between 40-60 GHz. The simulated output power is greater than 16 dBm across most of the band. This driver amplifier is suitable to drive the local oscillator signal of a W-band sub-harmonic mixer.

Original languageEnglish
Title of host publication2023 5th Australian Microwave Symposium (AMS)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages17-18
Number of pages2
ISBN (Electronic)9798350399363
ISBN (Print)9798350399370
DOIs
Publication statusPublished - 2023
Event5th Australian Microwave Symposium, AMS 2023 - Melbourne, Australia
Duration: 16 Feb 202317 Feb 2023

Conference

Conference5th Australian Microwave Symposium, AMS 2023
Country/TerritoryAustralia
CityMelbourne
Period16/02/2317/02/23

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