A 40-60 GHz driver amplifier implemented in 0.1 μm gallium arsenide process

Quoc Toan Chau; Sudipta Chakraborty; Nethini Imiyage

doi:10.1109/AMS57822.2023.10062313

A 40-60 GHz driver amplifier implemented in 0.1 μm gallium arsenide process

Quoc Toan Chau^*, Sudipta Chakraborty, Nethini Imiyage

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

The design of a broadband driver amplifier between 40-60 GHz is presented in this paper. The amplifier is implemented in 0.1 μm gallium arsenide process from Win Semiconductors. The amplifier achieves a measured gain of 15.5 dB at a nominal bias. The measured gain flatness is within 1 dB between 40-60 GHz. The simulated output power is greater than 16 dBm across most of the band. This driver amplifier is suitable to drive the local oscillator signal of a W-band sub-harmonic mixer.

Original language	English
Title of host publication	2023 5th Australian Microwave Symposium (AMS)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	17-18
Number of pages	2
ISBN (Electronic)	9798350399363
ISBN (Print)	9798350399370
DOIs	https://doi.org/10.1109/AMS57822.2023.10062313
Publication status	Published - 2023
Event	5th Australian Microwave Symposium, AMS 2023 - Melbourne, Australia Duration: 16 Feb 2023 → 17 Feb 2023

Conference

Conference	5th Australian Microwave Symposium, AMS 2023
Country/Territory	Australia
City	Melbourne
Period	16/02/23 → 17/02/23

Access to Document

10.1109/AMS57822.2023.10062313

Cite this

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title = "A 40-60 GHz driver amplifier implemented in 0.1 μm gallium arsenide process",

abstract = "The design of a broadband driver amplifier between 40-60 GHz is presented in this paper. The amplifier is implemented in 0.1 μm gallium arsenide process from Win Semiconductors. The amplifier achieves a measured gain of 15.5 dB at a nominal bias. The measured gain flatness is within 1 dB between 40-60 GHz. The simulated output power is greater than 16 dBm across most of the band. This driver amplifier is suitable to drive the local oscillator signal of a W-band sub-harmonic mixer. ",

author = "Chau, {Quoc Toan} and Sudipta Chakraborty and Nethini Imiyage",

year = "2023",

doi = "10.1109/AMS57822.2023.10062313",

language = "English",

isbn = "9798350399370",

pages = "17--18",

booktitle = "2023 5th Australian Microwave Symposium (AMS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "5th Australian Microwave Symposium, AMS 2023 ; Conference date: 16-02-2023 Through 17-02-2023",

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Chau, QT, Chakraborty, S & Imiyage, N 2023, A 40-60 GHz driver amplifier implemented in 0.1 μm gallium arsenide process. in 2023 5th Australian Microwave Symposium (AMS). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 17-18, 5th Australian Microwave Symposium, AMS 2023, Melbourne, Australia, 16/02/23. https://doi.org/10.1109/AMS57822.2023.10062313

A 40-60 GHz driver amplifier implemented in 0.1 μm gallium arsenide process. / Chau, Quoc Toan; Chakraborty, Sudipta; Imiyage, Nethini.
2023 5th Australian Microwave Symposium (AMS). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2023. p. 17-18.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Chau, Quoc Toan

AU - Chakraborty, Sudipta

AU - Imiyage, Nethini

PY - 2023

Y1 - 2023

N2 - The design of a broadband driver amplifier between 40-60 GHz is presented in this paper. The amplifier is implemented in 0.1 μm gallium arsenide process from Win Semiconductors. The amplifier achieves a measured gain of 15.5 dB at a nominal bias. The measured gain flatness is within 1 dB between 40-60 GHz. The simulated output power is greater than 16 dBm across most of the band. This driver amplifier is suitable to drive the local oscillator signal of a W-band sub-harmonic mixer.

AB - The design of a broadband driver amplifier between 40-60 GHz is presented in this paper. The amplifier is implemented in 0.1 μm gallium arsenide process from Win Semiconductors. The amplifier achieves a measured gain of 15.5 dB at a nominal bias. The measured gain flatness is within 1 dB between 40-60 GHz. The simulated output power is greater than 16 dBm across most of the band. This driver amplifier is suitable to drive the local oscillator signal of a W-band sub-harmonic mixer.

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U2 - 10.1109/AMS57822.2023.10062313

DO - 10.1109/AMS57822.2023.10062313

M3 - Conference proceeding contribution

AN - SCOPUS:85150679846

SN - 9798350399370

SP - 17

EP - 18

BT - 2023 5th Australian Microwave Symposium (AMS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 5th Australian Microwave Symposium, AMS 2023

Y2 - 16 February 2023 through 17 February 2023

ER -

A 40-60 GHz driver amplifier implemented in 0.1 μm gallium arsenide process

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