A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-μm silicon-on-insulator CMOS process for power-constraint application

A. Iji; X. Zhu; M. Heimlich

doi:10.1002/mop.27262

A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-μm silicon-on-insulator CMOS process for power-constraint application

A. Iji, X. Zhu^*, M. Heimlich

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A 1.5 V 4.5 mW 3-5 GHz low-noise amplifier (LNA) suitable for power-constraint application is implemented in a 0.25-μm silicon-on-insulator CMOS process.The designed LNA with good input and output impedance matching exhibits gain of 10.3 dB and 2-2.9 dB noise figure within the 3-5 GHz band. Moreover, the -3 dB bandwidth of the presented LNA is insensitive to process corner variations. A third-order input intercept point of -5 dBm is also achieved for the LNA at 3.6 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:89-93, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27262

Original language	English
Pages (from-to)	89-93
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	55
Issue number	1
DOIs	https://doi.org/10.1002/mop.27262
Publication status	Published - Jan 2013

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title = "A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-μm silicon-on-insulator CMOS process for power-constraint application",

abstract = "A 1.5 V 4.5 mW 3-5 GHz low-noise amplifier (LNA) suitable for power-constraint application is implemented in a 0.25-μm silicon-on-insulator CMOS process.The designed LNA with good input and output impedance matching exhibits gain of 10.3 dB and 2-2.9 dB noise figure within the 3-5 GHz band. Moreover, the -3 dB bandwidth of the presented LNA is insensitive to process corner variations. A third-order input intercept point of -5 dBm is also achieved for the LNA at 3.6 GHz. {\textcopyright} 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:89-93, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27262",

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AB - A 1.5 V 4.5 mW 3-5 GHz low-noise amplifier (LNA) suitable for power-constraint application is implemented in a 0.25-μm silicon-on-insulator CMOS process.The designed LNA with good input and output impedance matching exhibits gain of 10.3 dB and 2-2.9 dB noise figure within the 3-5 GHz band. Moreover, the -3 dB bandwidth of the presented LNA is insensitive to process corner variations. A third-order input intercept point of -5 dBm is also achieved for the LNA at 3.6 GHz. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:89-93, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27262

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A 4.5 mW 3-5 GHz low-noise amplifier in 0.25-μm silicon-on-insulator CMOS process for power-constraint application

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