A 65 nm CMOS LNA for Bolometer Application

Tom Nan Huang*, Chirn Chye Boon, Forest Xi Zhu, Xiang Yi, Xiaofeng He, Guangyin Feng, Wei Meng Lim, Bei Liu

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Modern bolometers generally consist of large-scale arrays of detectors. Implemented in conventional technologies, such bolometer arrays suffer from integrability and productivity issues. Recently, the development of CMOS technologies has presented an opportunity for the massive production of high-performance and highly integrated bolometers. This paper presents a 65-nm CMOS LNA designed for a millimeter-wave bolometer’s pre-amplification stage. By properly applying some positive feedback, the noise figure of the proposed LNA is minimized at under 6 dB and the bandwidth is extended to 30 GHz.

Original languageEnglish
Pages (from-to)356-372
Number of pages17
JournalJournal of Infrared, Millimeter, and Terahertz Waves
Volume37
Issue number4
DOIs
Publication statusPublished - 1 Apr 2016

Keywords

  • Bolometer
  • CMOS
  • Low-noise amplifier
  • Passive imaging

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