A charge-based capacitance model for AlGaAs/GaAs HEMTs

Sourabh Khandelwal; F. M. Yigletu; B. Iñiguez; Tor A. Fjeldly

doi:10.1016/j.sse.2013.01.017

A charge-based capacitance model for AlGaAs/GaAs HEMTs

Sourabh Khandelwal^*, F. M. Yigletu, B. Iñiguez, Tor A. Fjeldly

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this paper we present a charge-based analytical model for the intrinsic capacitances in AlGaAs/GaAs HEMTs. The model is developed from a consistent solution of Schrodinger's and Poisson's equations in the quantum well of these devices. The Ward-Dutton charge-partitioning scheme is used to derive the expressions for the drain and source charges. The proposed model is in a good agreement with experimental data.

Original language	English
Pages (from-to)	38-40
Number of pages	3
Journal	Solid-State Electronics
Volume	82
DOIs	https://doi.org/10.1016/j.sse.2013.01.017
Publication status	Published - 2013
Externally published	Yes

Keywords

2-DEG charge density
AlGaAs/GaAs HEMT
Analytical models
MODFETs

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10.1016/j.sse.2013.01.017

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title = "A charge-based capacitance model for AlGaAs/GaAs HEMTs",

abstract = "In this paper we present a charge-based analytical model for the intrinsic capacitances in AlGaAs/GaAs HEMTs. The model is developed from a consistent solution of Schrodinger's and Poisson's equations in the quantum well of these devices. The Ward-Dutton charge-partitioning scheme is used to derive the expressions for the drain and source charges. The proposed model is in a good agreement with experimental data.",

keywords = "2-DEG charge density, AlGaAs/GaAs HEMT, Analytical models, MODFETs",

author = "Sourabh Khandelwal and Yigletu, {F. M.} and B. I{\~n}iguez and Fjeldly, {Tor A.}",

year = "2013",

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pages = "38--40",

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AU - Khandelwal, Sourabh

AU - Yigletu, F. M.

AU - Iñiguez, B.

AU - Fjeldly, Tor A.

PY - 2013

Y1 - 2013

N2 - In this paper we present a charge-based analytical model for the intrinsic capacitances in AlGaAs/GaAs HEMTs. The model is developed from a consistent solution of Schrodinger's and Poisson's equations in the quantum well of these devices. The Ward-Dutton charge-partitioning scheme is used to derive the expressions for the drain and source charges. The proposed model is in a good agreement with experimental data.

AB - In this paper we present a charge-based analytical model for the intrinsic capacitances in AlGaAs/GaAs HEMTs. The model is developed from a consistent solution of Schrodinger's and Poisson's equations in the quantum well of these devices. The Ward-Dutton charge-partitioning scheme is used to derive the expressions for the drain and source charges. The proposed model is in a good agreement with experimental data.

KW - 2-DEG charge density

KW - AlGaAs/GaAs HEMT

KW - Analytical models

KW - MODFETs

UR - http://www.scopus.com/inward/record.url?scp=84874721323&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2013.01.017

DO - 10.1016/j.sse.2013.01.017

M3 - Article

AN - SCOPUS:84874721323

SN - 0038-1101

VL - 82

SP - 38

EP - 40

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

A charge-based capacitance model for AlGaAs/GaAs HEMTs

Abstract

Keywords

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