A charge-based capacitance model for AlGaAs/GaAs HEMTs

Sourabh Khandelwal*, F. M. Yigletu, B. Iñiguez, Tor A. Fjeldly

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In this paper we present a charge-based analytical model for the intrinsic capacitances in AlGaAs/GaAs HEMTs. The model is developed from a consistent solution of Schrodinger's and Poisson's equations in the quantum well of these devices. The Ward-Dutton charge-partitioning scheme is used to derive the expressions for the drain and source charges. The proposed model is in a good agreement with experimental data.

Original languageEnglish
Pages (from-to)38-40
Number of pages3
JournalSolid-State Electronics
Volume82
DOIs
Publication statusPublished - 2013
Externally publishedYes

Keywords

  • 2-DEG charge density
  • AlGaAs/GaAs HEMT
  • Analytical models
  • MODFETs

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