A compact charge-based physical model for AlGaN/GaN HEMTs

F. M. Yigletu*, B. Iñiguez, S. Khandelwal, T. A. Fjeldly

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

2 Citations (Scopus)

Abstract

This work presents a physical compact model for AlGaN/GaN HEMT devices. An analytical model of the drain current has been developed based on models of the charge density in the 2DEG channel but considering only a single energy level. The approach resulted in an accurate and simple current model. The model covers all the different operation regions of a device. Excellent agreements with measured I-V characteristics of a device have showed the validation of the model. 

Original languageEnglish
Title of host publication2013 IEEE Radio and Wireless Week
Subtitle of host publicationRWS, PAWR, WiSNet, BioWireleSS - proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages3
ISBN (Electronic)9781467329309
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 IEEE Radio and Wireless Week (RWW2013) - Austin, United States
Duration: 20 Jan 201323 Jan 2013

Conference

Conference2013 IEEE Radio and Wireless Week (RWW2013)
Abbreviated titleRWW
CountryUnited States
CityAustin
Period20/01/1323/01/13

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