Abstract
This work presents a physical compact model for AlGaN/GaN HEMT devices. An analytical model of the drain current has been developed based on models of the charge density in the 2DEG channel but considering only a single energy level. The approach resulted in an accurate and simple current model. The model covers all the different operation regions of a device. Excellent agreements with measured I-V characteristics of a device have showed the validation of the model.
Original language | English |
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Title of host publication | 2013 IEEE Radio and Wireless Week |
Subtitle of host publication | RWS, PAWR, WiSNet, BioWireleSS - proceedings |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Number of pages | 3 |
ISBN (Electronic) | 9781467329309 |
DOIs | |
Publication status | Published - 2013 |
Externally published | Yes |
Event | 2013 IEEE Radio and Wireless Week (RWW2013) - Austin, United States Duration: 20 Jan 2013 → 23 Jan 2013 |
Conference
Conference | 2013 IEEE Radio and Wireless Week (RWW2013) |
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Abbreviated title | RWW |
Country/Territory | United States |
City | Austin |
Period | 20/01/13 → 23/01/13 |