A computationally-efficient self-consistent large signal model for GaN HEMTs based on ASM-HEMT

S. Khandelwal; K. Kikuchi; H. Yamamoto

doi:10.23919/EuMIC50153.2022.9783975

A computationally-efficient self-consistent large signal model for GaN HEMTs based on ASM-HEMT

S. Khandelwal^*, K. Kikuchi, H. Yamamoto

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

An accurate non-linear large-signal physics-based model for 50 V GaN HEMT technology is presented in this paper. The developed model accounts for the effects of trapping on I-V and C-V characteristics of GaN HEMTs self-consistently. Using the developed model we show the significance of self-consistent modeling of I-V and C-V behavior of the device on its large signal performance in presence of trapping. The computational speed of the developed physics-based model is also presented showing its aptness for use in circuit simulations.

Original language	English
Title of host publication	2021 16th European Microwave Integrated Circuits Conference proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	13-16
Number of pages	4
ISBN (Electronic)	9782874870644
ISBN (Print)	9781665447225
DOIs	https://doi.org/10.23919/EuMIC50153.2022.9783975
Publication status	Published - 2021
Event	16th European Microwave Integrated Circuits Conference, EuMIC 2021 - London, United Kingdom Duration: 3 Apr 2022 → 4 Apr 2022

Conference

Conference	16th European Microwave Integrated Circuits Conference, EuMIC 2021
Country/Territory	United Kingdom
City	London
Period	3/04/22 → 4/04/22

Keywords

GaN HEMTs
Compact models
Large signal
RF PAs
Physics-based compact models

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10.23919/EuMIC50153.2022.9783975

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title = "A computationally-efficient self-consistent large signal model for GaN HEMTs based on ASM-HEMT",

abstract = "An accurate non-linear large-signal physics-based model for 50 V GaN HEMT technology is presented in this paper. The developed model accounts for the effects of trapping on I-V and C-V characteristics of GaN HEMTs self-consistently. Using the developed model we show the significance of self-consistent modeling of I-V and C-V behavior of the device on its large signal performance in presence of trapping. The computational speed of the developed physics-based model is also presented showing its aptness for use in circuit simulations. ",

keywords = "GaN HEMTs, Compact models, Large signal, RF PAs, Physics-based compact models",

author = "S. Khandelwal and K. Kikuchi and H. Yamamoto",

year = "2021",

doi = "10.23919/EuMIC50153.2022.9783975",

language = "English",

isbn = "9781665447225",

pages = "13--16",

booktitle = "2021 16th European Microwave Integrated Circuits Conference proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "16th European Microwave Integrated Circuits Conference, EuMIC 2021 ; Conference date: 03-04-2022 Through 04-04-2022",

}

Khandelwal, S, Kikuchi, K & Yamamoto, H 2021, A computationally-efficient self-consistent large signal model for GaN HEMTs based on ASM-HEMT. in 2021 16th European Microwave Integrated Circuits Conference proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 13-16, 16th European Microwave Integrated Circuits Conference, EuMIC 2021, London, United Kingdom, 3/04/22. https://doi.org/10.23919/EuMIC50153.2022.9783975

A computationally-efficient self-consistent large signal model for GaN HEMTs based on ASM-HEMT. / Khandelwal, S.; Kikuchi, K.; Yamamoto, H.
2021 16th European Microwave Integrated Circuits Conference proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2021. p. 13-16.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - A computationally-efficient self-consistent large signal model for GaN HEMTs based on ASM-HEMT

AU - Khandelwal, S.

AU - Kikuchi, K.

AU - Yamamoto, H.

PY - 2021

Y1 - 2021

N2 - An accurate non-linear large-signal physics-based model for 50 V GaN HEMT technology is presented in this paper. The developed model accounts for the effects of trapping on I-V and C-V characteristics of GaN HEMTs self-consistently. Using the developed model we show the significance of self-consistent modeling of I-V and C-V behavior of the device on its large signal performance in presence of trapping. The computational speed of the developed physics-based model is also presented showing its aptness for use in circuit simulations.

AB - An accurate non-linear large-signal physics-based model for 50 V GaN HEMT technology is presented in this paper. The developed model accounts for the effects of trapping on I-V and C-V characteristics of GaN HEMTs self-consistently. Using the developed model we show the significance of self-consistent modeling of I-V and C-V behavior of the device on its large signal performance in presence of trapping. The computational speed of the developed physics-based model is also presented showing its aptness for use in circuit simulations.

KW - GaN HEMTs

KW - Compact models

KW - Large signal

KW - RF PAs

KW - Physics-based compact models

UR - http://www.scopus.com/inward/record.url?scp=85133029983&partnerID=8YFLogxK

U2 - 10.23919/EuMIC50153.2022.9783975

DO - 10.23919/EuMIC50153.2022.9783975

M3 - Conference proceeding contribution

AN - SCOPUS:85133029983

SN - 9781665447225

SP - 13

EP - 16

BT - 2021 16th European Microwave Integrated Circuits Conference proceedings

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 16th European Microwave Integrated Circuits Conference, EuMIC 2021

Y2 - 3 April 2022 through 4 April 2022

ER -

A computationally-efficient self-consistent large signal model for GaN HEMTs based on ASM-HEMT

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