A D-band waveguide-SIW transition for 6G applications

Amir Altaf; Manzoor Elahi; Syed Muzahir Abbas; Jawad Yousaf; Eqab Almajali

doi:10.26866/jees.2022.4.r.104

A D-band waveguide-SIW transition for 6G applications

Amir Altaf^*, Manzoor Elahi, Syed Muzahir Abbas, Jawad Yousaf, Eqab Almajali

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

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Abstract

In this work, a design of a transition from a standard D-band waveguide to substrate integrated waveguide (SIW) technology is presented for 6G applications. The waveguide is connected to an SIW by carving a slot at the bottom metal of the printed circuit board (PCB). A pair of vias is added to shift the inband null to a higher frequency, whereas a parasitic patch is used to improve impedance matching. A prototype of a back-to-back SIW transition is fabricated and measured using D-band VNA extenders. The measurement shows a -10 dB impedance bandwidth of 26.5 GHz (135–161.5 GHz) and a 3-dB bandwidth of 28 GHz (133.8–161.8 GHz). The transition can be integrated with a D-band antenna for 6G applications.

Original language	English
Pages (from-to)	419-426
Number of pages	8
Journal	Journal of Electromagnetic Engineering and Science
Volume	22
Issue number	4
DOIs	https://doi.org/10.26866/jees.2022.4.r.104
Publication status	Published - Jul 2022

Bibliographical note

Copyright the Publisher. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

Keywords

SIW Technology
Waveguide-PCB Transition
6G Communication

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Publisher version (open access)Final published version, 2.06 MBLicence: CC BY-NC

Cite this

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title = "A D-band waveguide-SIW transition for 6G applications",

abstract = "In this work, a design of a transition from a standard D-band waveguide to substrate integrated waveguide (SIW) technology is presented for 6G applications. The waveguide is connected to an SIW by carving a slot at the bottom metal of the printed circuit board (PCB). A pair of vias is added to shift the inband null to a higher frequency, whereas a parasitic patch is used to improve impedance matching. A prototype of a back-to-back SIW transition is fabricated and measured using D-band VNA extenders. The measurement shows a -10 dB impedance bandwidth of 26.5 GHz (135–161.5 GHz) and a 3-dB bandwidth of 28 GHz (133.8–161.8 GHz). The transition can be integrated with a D-band antenna for 6G applications.",

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note = "Copyright the Publisher. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.",

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doi = "10.26866/jees.2022.4.r.104",

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AU - Altaf, Amir

AU - Elahi, Manzoor

AU - Abbas, Syed Muzahir

AU - Yousaf, Jawad

AU - Almajali, Eqab

N1 - Copyright the Publisher. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

PY - 2022/7

Y1 - 2022/7

N2 - In this work, a design of a transition from a standard D-band waveguide to substrate integrated waveguide (SIW) technology is presented for 6G applications. The waveguide is connected to an SIW by carving a slot at the bottom metal of the printed circuit board (PCB). A pair of vias is added to shift the inband null to a higher frequency, whereas a parasitic patch is used to improve impedance matching. A prototype of a back-to-back SIW transition is fabricated and measured using D-band VNA extenders. The measurement shows a -10 dB impedance bandwidth of 26.5 GHz (135–161.5 GHz) and a 3-dB bandwidth of 28 GHz (133.8–161.8 GHz). The transition can be integrated with a D-band antenna for 6G applications.

AB - In this work, a design of a transition from a standard D-band waveguide to substrate integrated waveguide (SIW) technology is presented for 6G applications. The waveguide is connected to an SIW by carving a slot at the bottom metal of the printed circuit board (PCB). A pair of vias is added to shift the inband null to a higher frequency, whereas a parasitic patch is used to improve impedance matching. A prototype of a back-to-back SIW transition is fabricated and measured using D-band VNA extenders. The measurement shows a -10 dB impedance bandwidth of 26.5 GHz (135–161.5 GHz) and a 3-dB bandwidth of 28 GHz (133.8–161.8 GHz). The transition can be integrated with a D-band antenna for 6G applications.

KW - SIW Technology

KW - Waveguide-PCB Transition

KW - 6G Communication

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VL - 22

SP - 419

EP - 426

JO - Journal of Electromagnetic Engineering and Science

JF - Journal of Electromagnetic Engineering and Science

IS - 4

ER -

A D-band waveguide-SIW transition for 6G applications

Abstract

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Keywords

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