A deep-level transient-conductance spectrometer for high-resistivity semiconductors using a marginal oscillator detector

D ALEXIEV; KSA BUTCHER; Trevor Tansley

doi:10.1143/JJAP.31.1909

A deep-level transient-conductance spectrometer for high-resistivity semiconductors using a marginal oscillator detector

D ALEXIEV^*, KSA BUTCHER, Trevor Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A deep-level transient-conductance spectrometer for high-resistivity semiconductors, using a radiofrequency (approximately 40 MHz) marginal oscillator as a conductance detector, is described. Spectra are generated by periodically filling deep-level trapping centres with carriers stimulated by a pulsed GaAs laser, and processing the trap-emptying conductance signal through an exponential Miller correlator as the sample temperature is slowly ramped. Simple capacitive coupling of samples to the oscillator tank circuit eliminates problems such as unwanted defect annealing and other material changes often associated with the high-temperature techniques necessary for ohmic contact formation. Representative deep-level spectra are given for semi-insulating Bridgman-grown CdTe.

Original language	English
Pages (from-to)	1909-1914
Number of pages	6
Journal	Japanese Journal of Applied Physics
Volume	31
Issue number	6A
DOIs	https://doi.org/10.1143/JJAP.31.1909
Publication status	Published - Jun 1992

Keywords

DEEP LEVELS
CONDUCTANCE
SEMIINSULATING
CDTE
GAAS
OPTICAL TRANSIENT-CONDUCTION SPECTROSCOPY
DLTSC
SPECTROSCOPY
STATE

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title = "A deep-level transient-conductance spectrometer for high-resistivity semiconductors using a marginal oscillator detector",

abstract = "A deep-level transient-conductance spectrometer for high-resistivity semiconductors, using a radiofrequency (approximately 40 MHz) marginal oscillator as a conductance detector, is described. Spectra are generated by periodically filling deep-level trapping centres with carriers stimulated by a pulsed GaAs laser, and processing the trap-emptying conductance signal through an exponential Miller correlator as the sample temperature is slowly ramped. Simple capacitive coupling of samples to the oscillator tank circuit eliminates problems such as unwanted defect annealing and other material changes often associated with the high-temperature techniques necessary for ohmic contact formation. Representative deep-level spectra are given for semi-insulating Bridgman-grown CdTe.",

keywords = "DEEP LEVELS, CONDUCTANCE, SEMIINSULATING, CDTE, GAAS, OPTICAL TRANSIENT-CONDUCTION SPECTROSCOPY, DLTSC, SPECTROSCOPY, STATE",

author = "D ALEXIEV and KSA BUTCHER and Trevor Tansley",

year = "1992",

month = jun,

doi = "10.1143/JJAP.31.1909",

language = "English",

volume = "31",

pages = "1909--1914",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics Publishing",

number = "6A",

}

TY - JOUR

T1 - A deep-level transient-conductance spectrometer for high-resistivity semiconductors using a marginal oscillator detector

AU - ALEXIEV, D

AU - BUTCHER, KSA

AU - Tansley, Trevor

PY - 1992/6

Y1 - 1992/6

N2 - A deep-level transient-conductance spectrometer for high-resistivity semiconductors, using a radiofrequency (approximately 40 MHz) marginal oscillator as a conductance detector, is described. Spectra are generated by periodically filling deep-level trapping centres with carriers stimulated by a pulsed GaAs laser, and processing the trap-emptying conductance signal through an exponential Miller correlator as the sample temperature is slowly ramped. Simple capacitive coupling of samples to the oscillator tank circuit eliminates problems such as unwanted defect annealing and other material changes often associated with the high-temperature techniques necessary for ohmic contact formation. Representative deep-level spectra are given for semi-insulating Bridgman-grown CdTe.

AB - A deep-level transient-conductance spectrometer for high-resistivity semiconductors, using a radiofrequency (approximately 40 MHz) marginal oscillator as a conductance detector, is described. Spectra are generated by periodically filling deep-level trapping centres with carriers stimulated by a pulsed GaAs laser, and processing the trap-emptying conductance signal through an exponential Miller correlator as the sample temperature is slowly ramped. Simple capacitive coupling of samples to the oscillator tank circuit eliminates problems such as unwanted defect annealing and other material changes often associated with the high-temperature techniques necessary for ohmic contact formation. Representative deep-level spectra are given for semi-insulating Bridgman-grown CdTe.

KW - DEEP LEVELS

KW - CONDUCTANCE

KW - SEMIINSULATING

KW - CDTE

KW - GAAS

KW - OPTICAL TRANSIENT-CONDUCTION SPECTROSCOPY

KW - DLTSC

KW - SPECTROSCOPY

KW - STATE

U2 - 10.1143/JJAP.31.1909

DO - 10.1143/JJAP.31.1909

M3 - Article

SN - 0021-4922

VL - 31

SP - 1909

EP - 1914

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6A

ER -

A deep-level transient-conductance spectrometer for high-resistivity semiconductors using a marginal oscillator detector

Abstract

Keywords

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