A GaN HEMT amplifier with 6-W output power and <85% power-added efficiency

Michael Boers; Anthony Parker; Neil Weste

doi:10.1109/MMM.2008.915338

A GaN HEMT amplifier with 6-W output power and <85% power-added efficiency

Michael Boers^*, Anthony Parker, Neil Weste

^*Corresponding author for this work

Faculty of Science and Engineering

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7 Citations (Scopus)

Abstract

The winning power amplifier implemented with a gallium nitride (GaN) high electron mobility transistor (HEMT) and having power added efficiency (PAE) greater than 85%. It is shown that computer-aided design (CAD) simulation tools, accurate device models, and sensible design rule can produce first-pass power amplifier design success. To design a a power amplifier with highest efficiency at an output power above 5W and at a frequency above 1GHz, the amplifier was designed for an output frequency of 1.2 GHz, an output power of greater than 38 dBm, and an efficiency above 80%. The transistor chosen for this design was a 10-W RF power GaN HEMT and is available in a screw-down package and is not internally matched. It comes with an accurate nonlinear model, which is critical for the design of high efficiency power amplifiers. The efficiency generated by this method was 88% at 1.2 GHz with an output power just above 6W.

Original language	English
Pages	106-110
Number of pages	5
Volume	9
No.	2
Specialist publication	IEEE Microwave Magazine
DOIs	https://doi.org/10.1109/MMM.2008.915338
Publication status	Published - Apr 2008

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@misc{427dbb11dc1f415a9e96d1f01829b3b3,

title = "A GaN HEMT amplifier with 6-W output power and <85% power-added efficiency",

abstract = "The winning power amplifier implemented with a gallium nitride (GaN) high electron mobility transistor (HEMT) and having power added efficiency (PAE) greater than 85%. It is shown that computer-aided design (CAD) simulation tools, accurate device models, and sensible design rule can produce first-pass power amplifier design success. To design a a power amplifier with highest efficiency at an output power above 5W and at a frequency above 1GHz, the amplifier was designed for an output frequency of 1.2 GHz, an output power of greater than 38 dBm, and an efficiency above 80%. The transistor chosen for this design was a 10-W RF power GaN HEMT and is available in a screw-down package and is not internally matched. It comes with an accurate nonlinear model, which is critical for the design of high efficiency power amplifiers. The efficiency generated by this method was 88% at 1.2 GHz with an output power just above 6W.",

author = "Michael Boers and Anthony Parker and Neil Weste",

year = "2008",

month = apr,

doi = "10.1109/MMM.2008.915338",

language = "English",

volume = "9",

pages = "106--110",

journal = "IEEE Microwave Magazine",

issn = "1527-3342",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

TY - GEN

T1 - A GaN HEMT amplifier with 6-W output power and <85% power-added efficiency

AU - Boers, Michael

AU - Parker, Anthony

AU - Weste, Neil

PY - 2008/4

Y1 - 2008/4

N2 - The winning power amplifier implemented with a gallium nitride (GaN) high electron mobility transistor (HEMT) and having power added efficiency (PAE) greater than 85%. It is shown that computer-aided design (CAD) simulation tools, accurate device models, and sensible design rule can produce first-pass power amplifier design success. To design a a power amplifier with highest efficiency at an output power above 5W and at a frequency above 1GHz, the amplifier was designed for an output frequency of 1.2 GHz, an output power of greater than 38 dBm, and an efficiency above 80%. The transistor chosen for this design was a 10-W RF power GaN HEMT and is available in a screw-down package and is not internally matched. It comes with an accurate nonlinear model, which is critical for the design of high efficiency power amplifiers. The efficiency generated by this method was 88% at 1.2 GHz with an output power just above 6W.

AB - The winning power amplifier implemented with a gallium nitride (GaN) high electron mobility transistor (HEMT) and having power added efficiency (PAE) greater than 85%. It is shown that computer-aided design (CAD) simulation tools, accurate device models, and sensible design rule can produce first-pass power amplifier design success. To design a a power amplifier with highest efficiency at an output power above 5W and at a frequency above 1GHz, the amplifier was designed for an output frequency of 1.2 GHz, an output power of greater than 38 dBm, and an efficiency above 80%. The transistor chosen for this design was a 10-W RF power GaN HEMT and is available in a screw-down package and is not internally matched. It comes with an accurate nonlinear model, which is critical for the design of high efficiency power amplifiers. The efficiency generated by this method was 88% at 1.2 GHz with an output power just above 6W.

UR - http://www.scopus.com/inward/record.url?scp=41549098857&partnerID=8YFLogxK

U2 - 10.1109/MMM.2008.915338

DO - 10.1109/MMM.2008.915338

M3 - Article

AN - SCOPUS:41549098857

SN - 1527-3342

VL - 9

SP - 106

EP - 110

JO - IEEE Microwave Magazine

JF - IEEE Microwave Magazine

ER -

A GaN HEMT amplifier with 6-W output power and <85% power-added efficiency

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