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A hybrid random laser using dye with self-organized GaN nanorods

W. Maryam, H. H. Tan, C. Jagadish, J. M. Dawes, B. Zhao, W. Z. Wan Ismail

Research output: Contribution to journalArticlepeer-review

Abstract

Self-organized GaN nanorods with population densities ranging between 0.1 and 0.5 μm−2 and average heights in the range 1.7–16.5 µm, prepared by metal-organic chemical vapor deposition, were used as scattering centers for random lasing by incorporating Rhodamine 6G liquid dye solutions as the gain media. A lasing threshold as low as 11.3 J cm−2 was obtained from samples with nanorod density above 0.3 μm−2. The threshold depended on the nanorod density and diameter, but not the nanorod height. Lasing emission was observed at multiple angles, a clear indication of random lasing.
Original languageEnglish
Article number025009
Pages (from-to)1-7
Number of pages7
JournalSemiconductor Science and Technology
Volume37
Issue number2
Early online date22 Dec 2021
DOIs
Publication statusPublished - Feb 2022

Keywords

  • light confinement
  • nanotechnology
  • wide-bandgap semiconductor
  • random laser

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