Abstract
Self-organized GaN nanorods with population densities ranging between 0.1 and 0.5 μm−2 and average heights in the range 1.7–16.5 µm, prepared by metal-organic chemical vapor deposition, were used as scattering centers for random lasing by incorporating Rhodamine 6G liquid dye solutions as the gain media. A lasing threshold as low as 11.3 J cm−2 was obtained from samples with nanorod density above 0.3 μm−2. The threshold depended on the nanorod density and diameter, but not the nanorod height. Lasing emission was observed at multiple angles, a clear indication of random lasing.
| Original language | English |
|---|---|
| Article number | 025009 |
| Pages (from-to) | 1-7 |
| Number of pages | 7 |
| Journal | Semiconductor Science and Technology |
| Volume | 37 |
| Issue number | 2 |
| Early online date | 22 Dec 2021 |
| DOIs | |
| Publication status | Published - Feb 2022 |
Keywords
- light confinement
- nanotechnology
- wide-bandgap semiconductor
- random laser
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