A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation

T. J. Manning; T. Hardy; M. Merklein; M. Wintrebert-Fouquet; M. R. Phillips

doi:10.1109/COMMAD.2010.5699705

A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation

T. J. Manning, T. Hardy, M. Merklein, M. Wintrebert-Fouquet, M. R. Phillips

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (C_N at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg⁰) transition at 300 K. This results in increased cathodoluminescence (CL) emission at room temperature and a decrease in CL emission at liquid nitrogen temperatures (~77 K).

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	139-140
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699705
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Other

Other	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699705

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@inproceedings{3ebd18f56ad14fa780f848bd8201b7f5,

title = "A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation",

abstract = "Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (CN at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg0) transition at 300 K. This results in increased cathodoluminescence (CL) emission at room temperature and a decrease in CL emission at liquid nitrogen temperatures (\textasciitilde{}77 K).",

author = "Manning, \{T. J.\} and T. Hardy and M. Merklein and M. Wintrebert-Fouquet and Phillips, \{M. R.\}",

year = "2010",

doi = "10.1109/COMMAD.2010.5699705",

language = "English",

isbn = "9781424473328",

pages = "139--140",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Manning, TJ, Hardy, T, Merklein, M, Wintrebert-Fouquet, M & Phillips, MR 2010, A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699705, pp. 139-140, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699705

A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation. / Manning, T. J.; Hardy, T.; Merklein, M. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 139-140 5699705.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation

AU - Manning, T. J.

AU - Hardy, T.

AU - Merklein, M.

AU - Wintrebert-Fouquet, M.

AU - Phillips, M. R.

PY - 2010

Y1 - 2010

N2 - Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (CN at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg0) transition at 300 K. This results in increased cathodoluminescence (CL) emission at room temperature and a decrease in CL emission at liquid nitrogen temperatures (~77 K).

AB - Low Energy Electron Beam Irradiation (LEEBI) was found to quench the donor-acceptor pair (DAP) attributed to carbon (CN at 3.28 eV at 80 K) and enhances the emission of the 3.27 eV peak, which has been attributed to a free-to-bound (e,Mg0) transition at 300 K. This results in increased cathodoluminescence (CL) emission at room temperature and a decrease in CL emission at liquid nitrogen temperatures (~77 K).

UR - https://www.scopus.com/pages/publications/79951746295

U2 - 10.1109/COMMAD.2010.5699705

DO - 10.1109/COMMAD.2010.5699705

M3 - Conference proceeding contribution

AN - SCOPUS:79951746295

SN - 9781424473328

SP - 139

EP - 140

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

A Mechanism for Mg acceptor activation in GaN by Low Energy Electron Beam Irradiation

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