A neutron damage study of liquid phase epitaxial GaAs and high purity silicon

K. S A Butcher*, D. Alexiev, J. W. Boldeman

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Neutron irradiation studies of silicon and liquid phase epitaxial (LPE) GaAs Schottky barrier radiation detectors were carried out using 1.1 MeV fast neutrons produced using the Australian Nuclear Science and Technology Organisation's 3 MeV Van de Graaff accelerator. Neutrons were provided by bombardment of a 7Li target with 3 MeV protons to a maximum fluence of 7 × 1013 neutrons cm-2. Neutron damage to the detectors was characterised using capacitive deep level transient spectroscopy, optical deep level transient conductance spectroscopy, current-voltage measurements and capacitance-voltage measurements. The degradation of 241Am spectra was also observed.

Original languageEnglish
Pages (from-to)355-370
Number of pages16
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume95
Issue number3
DOIs
Publication statusPublished - 2 Mar 1995
Externally publishedYes

Fingerprint Dive into the research topics of 'A neutron damage study of liquid phase epitaxial GaAs and high purity silicon'. Together they form a unique fingerprint.

Cite this