TY - JOUR
T1 - A new small-signal parameter extraction technique for large gate-periphery GaN HEMTs
AU - Aamir Ahsan, Sheikh
AU - Pampori, Ahtisham-ul-Haq
AU - Ghosh, Sudip
AU - Khandelwal, Sourabh
AU - Chauhan, Yogesh Singh
PY - 2017/10
Y1 - 2017/10
N2 - In this letter, we propose a method to extract the small-signal
equivalent circuit model for GaN HEMTs using extrinsic-level RF
broadband (0.5-50 GHz) Z-parameters. The measured Z-parameters of large
gate-periphery GaN devices exhibit certain interesting characteristics,
due to their inherently larger intrinsic capacitances and their
subsequent interaction with the extrinsic inductances. We exploit these
characteristics to simultaneously extract the intrinsic as well as the
extrinsic small-signal model components and successfully validate it
with measured S-parameter data for a 10 × 90 μm GaN device.
AB - In this letter, we propose a method to extract the small-signal
equivalent circuit model for GaN HEMTs using extrinsic-level RF
broadband (0.5-50 GHz) Z-parameters. The measured Z-parameters of large
gate-periphery GaN devices exhibit certain interesting characteristics,
due to their inherently larger intrinsic capacitances and their
subsequent interaction with the extrinsic inductances. We exploit these
characteristics to simultaneously extract the intrinsic as well as the
extrinsic small-signal model components and successfully validate it
with measured S-parameter data for a 10 × 90 μm GaN device.
UR - http://www.scopus.com/inward/record.url?scp=85030631776&partnerID=8YFLogxK
U2 - 10.1109/LMWC.2017.2746661
DO - 10.1109/LMWC.2017.2746661
M3 - Article
AN - SCOPUS:85030631776
SN - 1531-1309
VL - 27
SP - 918
EP - 920
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 10
ER -