In this brief, we present a physics-based analytical model for 2-D electron gas density ns in AlGaN/GaN high-electron mobility transistors. The proposed model accounts for the interdependence between Fermi level E f and ns. The model is developed by considering the variation of Ef, the first subband E0, the second subband E1, and ns with applied gate voltage Vg. The proposed model is in very good agreement with numerical calculations.
- AlGaN/GaN high-electron mobility transistor (HEMT)
- analytical models
- two-dimensional electron gas (2DEG) charge density