A physics-based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices

Sourabh Khandelwal*, Nitin Goyal, Tor A. Fjeldly

*Corresponding author for this work

Research output: Contribution to journalArticle

105 Citations (Scopus)

Abstract

In this brief, we present a physics-based analytical model for 2-D electron gas density ns in AlGaN/GaN high-electron mobility transistors. The proposed model accounts for the interdependence between Fermi level E f and ns. The model is developed by considering the variation of Ef, the first subband E0, the second subband E1, and ns with applied gate voltage Vg. The proposed model is in very good agreement with numerical calculations.

Original languageEnglish
Article number5982373
Pages (from-to)3622-3625
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume58
Issue number10
DOIs
Publication statusPublished - Oct 2011
Externally publishedYes

Keywords

  • AlGaN/GaN high-electron mobility transistor (HEMT)
  • analytical models
  • two-dimensional electron gas (2DEG) charge density

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