A physics-based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices

Sourabh Khandelwal; Nitin Goyal; Tor A. Fjeldly

doi:10.1109/TED.2011.2161314

A physics-based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices

Sourabh Khandelwal^*, Nitin Goyal, Tor A. Fjeldly

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

177 Citations (Scopus)

Abstract

In this brief, we present a physics-based analytical model for 2-D electron gas density n_s in AlGaN/GaN high-electron mobility transistors. The proposed model accounts for the interdependence between Fermi level E _f and n_s. The model is developed by considering the variation of E_f, the first subband E₀, the second subband E₁, and n_s with applied gate voltage V_g. The proposed model is in very good agreement with numerical calculations.

Original language	English
Article number	5982373
Pages (from-to)	3622-3625
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	10
DOIs	https://doi.org/10.1109/TED.2011.2161314
Publication status	Published - Oct 2011
Externally published	Yes

Keywords

AlGaN/GaN high-electron mobility transistor (HEMT)
analytical models
two-dimensional electron gas (2DEG) charge density

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10.1109/TED.2011.2161314

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title = "A physics-based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices",

abstract = "In this brief, we present a physics-based analytical model for 2-D electron gas density ns in AlGaN/GaN high-electron mobility transistors. The proposed model accounts for the interdependence between Fermi level E f and ns. The model is developed by considering the variation of Ef, the first subband E0, the second subband E1, and ns with applied gate voltage Vg. The proposed model is in very good agreement with numerical calculations.",

keywords = "AlGaN/GaN high-electron mobility transistor (HEMT), analytical models, two-dimensional electron gas (2DEG) charge density",

author = "Sourabh Khandelwal and Nitin Goyal and Fjeldly, {Tor A.}",

year = "2011",

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AU - Goyal, Nitin

AU - Fjeldly, Tor A.

PY - 2011/10

Y1 - 2011/10

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AB - In this brief, we present a physics-based analytical model for 2-D electron gas density ns in AlGaN/GaN high-electron mobility transistors. The proposed model accounts for the interdependence between Fermi level E f and ns. The model is developed by considering the variation of Ef, the first subband E0, the second subband E1, and ns with applied gate voltage Vg. The proposed model is in very good agreement with numerical calculations.

KW - AlGaN/GaN high-electron mobility transistor (HEMT)

KW - analytical models

KW - two-dimensional electron gas (2DEG) charge density

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A physics-based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices

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Keywords

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