A physics based compact model for drain current in AlGaN/GaN HEMT devices

Sourabh Khandelwal*, Tor A. Fjeldly

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

20 Citations (Scopus)

Abstract

In this paper we present a physics based analytical model for the drain current I d in AlGaN/GaN high electron mobility transistors. The proposed model is developed based on the analytical 2-D electron gas density n s model developed previously by our group. The model includes important effects like velocity saturation, channel length modulation, short channel effect, pinch-off, mobility degradation, and self-heating. The model is in excellent agreement with the experimental data over a typical range of applied gate and drain voltages for various device geometries.

Original languageEnglish
Title of host publicationProceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
Place of PublicationPiscataway, New Jersey
Pages241-244
Number of pages4
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 - Bruges, Belgium
Duration: 3 Jun 20127 Jun 2012

Other

Other24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
CountryBelgium
CityBruges
Period3/06/127/06/12

Keywords

  • AlGaN/GaN HEMT
  • compact models
  • modulation doped field effect transistors (MODFETs)

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