A physics based compact model for drain current in AlGaN/GaN HEMT devices

Sourabh Khandelwal; Tor A. Fjeldly

doi:10.1109/ISPSD.2012.6229068

A physics based compact model for drain current in AlGaN/GaN HEMT devices

Sourabh Khandelwal^*, Tor A. Fjeldly

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

24 Citations (Scopus)

Abstract

In this paper we present a physics based analytical model for the drain current I _d in AlGaN/GaN high electron mobility transistors. The proposed model is developed based on the analytical 2-D electron gas density n _s model developed previously by our group. The model includes important effects like velocity saturation, channel length modulation, short channel effect, pinch-off, mobility degradation, and self-heating. The model is in excellent agreement with the experimental data over a typical range of applied gate and drain voltages for various device geometries.

Original language	English
Title of host publication	Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
Place of Publication	Piscataway, New Jersey
Pages	241-244
Number of pages	4
DOIs	https://doi.org/10.1109/ISPSD.2012.6229068
Publication status	Published - 2012
Externally published	Yes
Event	24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 - Bruges, Belgium Duration: 3 Jun 2012 → 7 Jun 2012

Other

Other	24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12
Country/Territory	Belgium
City	Bruges
Period	3/06/12 → 7/06/12

Keywords

AlGaN/GaN HEMT
compact models
modulation doped field effect transistors (MODFETs)

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10.1109/ISPSD.2012.6229068

Cite this

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title = "A physics based compact model for drain current in AlGaN/GaN HEMT devices",

abstract = "In this paper we present a physics based analytical model for the drain current I d in AlGaN/GaN high electron mobility transistors. The proposed model is developed based on the analytical 2-D electron gas density n s model developed previously by our group. The model includes important effects like velocity saturation, channel length modulation, short channel effect, pinch-off, mobility degradation, and self-heating. The model is in excellent agreement with the experimental data over a typical range of applied gate and drain voltages for various device geometries.",

keywords = "AlGaN/GaN HEMT, compact models, modulation doped field effect transistors (MODFETs)",

author = "Sourabh Khandelwal and Fjeldly, {Tor A.}",

year = "2012",

doi = "10.1109/ISPSD.2012.6229068",

language = "English",

isbn = "9781457715952",

pages = "241--244",

booktitle = "Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12",

note = "24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 ; Conference date: 03-06-2012 Through 07-06-2012",

}

Khandelwal, S & Fjeldly, TA 2012, A physics based compact model for drain current in AlGaN/GaN HEMT devices. in Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12. Piscataway, New Jersey, pp. 241-244, 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12, Bruges, Belgium, 3/06/12. https://doi.org/10.1109/ISPSD.2012.6229068

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AU - Khandelwal, Sourabh

AU - Fjeldly, Tor A.

PY - 2012

Y1 - 2012

N2 - In this paper we present a physics based analytical model for the drain current I d in AlGaN/GaN high electron mobility transistors. The proposed model is developed based on the analytical 2-D electron gas density n s model developed previously by our group. The model includes important effects like velocity saturation, channel length modulation, short channel effect, pinch-off, mobility degradation, and self-heating. The model is in excellent agreement with the experimental data over a typical range of applied gate and drain voltages for various device geometries.

AB - In this paper we present a physics based analytical model for the drain current I d in AlGaN/GaN high electron mobility transistors. The proposed model is developed based on the analytical 2-D electron gas density n s model developed previously by our group. The model includes important effects like velocity saturation, channel length modulation, short channel effect, pinch-off, mobility degradation, and self-heating. The model is in excellent agreement with the experimental data over a typical range of applied gate and drain voltages for various device geometries.

KW - AlGaN/GaN HEMT

KW - compact models

KW - modulation doped field effect transistors (MODFETs)

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DO - 10.1109/ISPSD.2012.6229068

M3 - Conference proceeding contribution

AN - SCOPUS:84864746923

SN - 9781457715952

SP - 241

EP - 244

BT - Proceedings of the 2012 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12

CY - Piscataway, New Jersey

T2 - 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12

Y2 - 3 June 2012 through 7 June 2012

ER -

A physics based compact model for drain current in AlGaN/GaN HEMT devices

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