A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices

Sourabh Khandelwal; Tor A. Fjeldly

doi:10.1109/ICCDCS.2012.6188891

A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices

Sourabh Khandelwal^*, Tor A. Fjeldly

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

11 Citations (Scopus)

Abstract

In this paper we present a physics-based analytical model for the gate capacitance C_g in AlGaN/GaN HEMT devices. A continuous and analytical expression for the 2-DEG charge density n_s is developed from the consistent solution of Schrodinger's and Poisson's equation in a quantum well with triangular potential profile. The developed n_s expression is used to derive the model for C_g. The proposed model is valid in all regions of device operation and has no empirical parameters. The model is in excellent agreement with experimental data.

Original language	English
Title of host publication	ICCDCS 2012
Subtitle of host publication	Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems
Place of Publication	Piscataway, NJ
Pages	1-4
Number of pages	4
DOIs	https://doi.org/10.1109/ICCDCS.2012.6188891
Publication status	Published - 2012
Externally published	Yes
Event	2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 - Playa del Carmen, Mexico Duration: 14 Mar 2012 → 17 Mar 2012

Other

Other	2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
Country/Territory	Mexico
City	Playa del Carmen
Period	14/03/12 → 17/03/12

Keywords

AlGaN/GaN HEMT devices
Analytical Modeling
Compact Modeling
MODFETs

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10.1109/ICCDCS.2012.6188891

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title = "A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices",

abstract = "In this paper we present a physics-based analytical model for the gate capacitance Cg in AlGaN/GaN HEMT devices. A continuous and analytical expression for the 2-DEG charge density ns is developed from the consistent solution of Schrodinger's and Poisson's equation in a quantum well with triangular potential profile. The developed ns expression is used to derive the model for Cg. The proposed model is valid in all regions of device operation and has no empirical parameters. The model is in excellent agreement with experimental data.",

keywords = "AlGaN/GaN HEMT devices, Analytical Modeling, Compact Modeling, MODFETs",

author = "Sourabh Khandelwal and Fjeldly, {Tor A.}",

year = "2012",

doi = "10.1109/ICCDCS.2012.6188891",

language = "English",

isbn = "9781457711169",

pages = "1--4",

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note = "2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 ; Conference date: 14-03-2012 Through 17-03-2012",

}

Khandelwal, S & Fjeldly, TA 2012, A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices. in ICCDCS 2012: Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems. Piscataway, NJ, pp. 1-4, 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012, Playa del Carmen, Mexico, 14/03/12. https://doi.org/10.1109/ICCDCS.2012.6188891

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AU - Fjeldly, Tor A.

PY - 2012

Y1 - 2012

N2 - In this paper we present a physics-based analytical model for the gate capacitance Cg in AlGaN/GaN HEMT devices. A continuous and analytical expression for the 2-DEG charge density ns is developed from the consistent solution of Schrodinger's and Poisson's equation in a quantum well with triangular potential profile. The developed ns expression is used to derive the model for Cg. The proposed model is valid in all regions of device operation and has no empirical parameters. The model is in excellent agreement with experimental data.

AB - In this paper we present a physics-based analytical model for the gate capacitance Cg in AlGaN/GaN HEMT devices. A continuous and analytical expression for the 2-DEG charge density ns is developed from the consistent solution of Schrodinger's and Poisson's equation in a quantum well with triangular potential profile. The developed ns expression is used to derive the model for Cg. The proposed model is valid in all regions of device operation and has no empirical parameters. The model is in excellent agreement with experimental data.

KW - AlGaN/GaN HEMT devices

KW - Analytical Modeling

KW - Compact Modeling

KW - MODFETs

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DO - 10.1109/ICCDCS.2012.6188891

M3 - Conference proceeding contribution

AN - SCOPUS:84861001779

SN - 9781457711169

SP - 1

EP - 4

BT - ICCDCS 2012

CY - Piscataway, NJ

T2 - 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

Y2 - 14 March 2012 through 17 March 2012

ER -

A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices

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