Abstract
In this paper we present a physics-based analytical model for the gate capacitance Cg in AlGaN/GaN HEMT devices. A continuous and analytical expression for the 2-DEG charge density ns is developed from the consistent solution of Schrodinger's and Poisson's equation in a quantum well with triangular potential profile. The developed ns expression is used to derive the model for Cg. The proposed model is valid in all regions of device operation and has no empirical parameters. The model is in excellent agreement with experimental data.
Original language | English |
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Title of host publication | ICCDCS 2012 |
Subtitle of host publication | Proceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems |
Place of Publication | Piscataway, NJ |
Pages | 1-4 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 2012 |
Externally published | Yes |
Event | 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 - Playa del Carmen, Mexico Duration: 14 Mar 2012 → 17 Mar 2012 |
Other
Other | 2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 |
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Country/Territory | Mexico |
City | Playa del Carmen |
Period | 14/03/12 → 17/03/12 |
Keywords
- AlGaN/GaN HEMT devices
- Analytical Modeling
- Compact Modeling
- MODFETs