A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices

Sourabh Khandelwal*, Tor A. Fjeldly

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

10 Citations (Scopus)

Abstract

In this paper we present a physics-based analytical model for the gate capacitance Cg in AlGaN/GaN HEMT devices. A continuous and analytical expression for the 2-DEG charge density ns is developed from the consistent solution of Schrodinger's and Poisson's equation in a quantum well with triangular potential profile. The developed ns expression is used to derive the model for Cg. The proposed model is valid in all regions of device operation and has no empirical parameters. The model is in excellent agreement with experimental data.

Original languageEnglish
Title of host publicationICCDCS 2012
Subtitle of host publicationProceedings of the 8th International Caribbean Conference on Devices, Circuits and Systems
Place of PublicationPiscataway, NJ
Pages1-4
Number of pages4
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012 - Playa del Carmen, Mexico
Duration: 14 Mar 201217 Mar 2012

Other

Other2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
CountryMexico
CityPlaya del Carmen
Period14/03/1217/03/12

Keywords

  • AlGaN/GaN HEMT devices
  • Analytical Modeling
  • Compact Modeling
  • MODFETs

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