A physics based compact model of I-V and C-V characteristics in AlGaN/GaN HEMT devices

Sourabh Khandelwal*, T. A. Fjeldly

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

84 Citations (Scopus)

Abstract

In this paper we present a physics-based compact model for drain current I d and intrinsic gate-drain and gate-source capacitances C GS and C GD in AlGaN/GaN high electron mobility transistors. An analytical expression for the 2-DEG charge density n s, valid in all the regions of device operation is developed and applied to derive current and capacitances. The drain current model includes important physical effects like velocity saturation, channel length modulation, short channel effect, mobility degradation effect, and self-heating. The expression for n s is used to derive a model for C GS and C GD applicable in all the regions of device operation. The parameters introduced in the model have a clear link to the physical effects facilitating easy extraction of parameter values. The model is in excellent agreement with experimental data for both drain current and capacitances over a typical range of applied voltages and device geometries.

Original languageEnglish
Pages (from-to)60-66
Number of pages7
JournalSolid-State Electronics
Volume76
DOIs
Publication statusPublished - Oct 2012
Externally publishedYes

Keywords

  • AlGaN/GaN HEMT
  • Analytical models
  • Compact models
  • MODFETs

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