A potential red-emitting phosphor BaGd2(MoO4) 4:Eu3+ for near-UV white LED

Chongfeng Guo, Hyun Kyoung Yang, Zuoling Fu, Ling Li, Byung Chun Choi, Jung Hyun Jeong*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)


Red-emitting phosphor BaGd2-xEux(MoO 4)4 has been successfully synthesized by a simple sol-gel method. The process of phosphor formation is characterized by thermogravimetric-differential thermal analysis and X-ray diffraction. Field-emission scanning electronic microscopy is used to characterize the size and the shape of the phosphor particles. Photo-luminescent property of the phosphor is also performed at the room temperature. The effects of firing temperature and Eu3+ activator concentration on the photoluminescence (PL) properties are elaborated in detail. PL characterization reveals that the sample with the firing temperature at 800°C and the concentration of Eu 3+ at 0.7 shows the most intense emission, and its intensity is about three times stronger than that of phosphor prepared by solid-state method with the same composition and firing temperature. The new red-emitting phosphor shows an intense absorption at 396 nm, which matches well with commercial near-UV light-emitting diode (LED) chips, therefore, it is a good candidate of red phosphor used for near-UV white LEDs.

Original languageEnglish
Pages (from-to)1713-1718
Number of pages6
JournalJournal of the American Ceramic Society
Issue number8
Publication statusPublished - Aug 2009

Fingerprint Dive into the research topics of 'A potential red-emitting phosphor BaGd2(MoO4) 4:Eu3+ for near-UV white LED'. Together they form a unique fingerprint.

Cite this