TY - JOUR
T1 - A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation
AU - Khandelwal, Sourabh
AU - Goyal, Nitin
AU - Fjeldly, Tor A.
PY - 2013/1
Y1 - 2013/1
N2 - In this paper we present a precise physics based analytical model for the two-dimensional electron gas density ns in AlGaAs/GaAs high electron mobility transistors. The model is developed by considering the variation of Fermi-level Ef, the first sub-band E0, the second sub-band E1, and ns with the applied gate voltage Vg. Taking into account the interdependence between Ef and ns, we have developed an explicit expression for ns in terms of bias voltages. The developed expression for ns is valid in all the regions of device operation, with gate-voltage ranging from below to above the cut-off voltage. The proposed model is in very good agreement with numerical calculations.
AB - In this paper we present a precise physics based analytical model for the two-dimensional electron gas density ns in AlGaAs/GaAs high electron mobility transistors. The model is developed by considering the variation of Fermi-level Ef, the first sub-band E0, the second sub-band E1, and ns with the applied gate voltage Vg. Taking into account the interdependence between Ef and ns, we have developed an explicit expression for ns in terms of bias voltages. The developed expression for ns is valid in all the regions of device operation, with gate-voltage ranging from below to above the cut-off voltage. The proposed model is in very good agreement with numerical calculations.
KW - 2-DEG charge density
KW - AlGaAs/GaAs HEMT
KW - Analytical models
KW - MODFETs
UR - http://www.scopus.com/inward/record.url?scp=84869506780&partnerID=8YFLogxK
U2 - 10.1016/j.sse.2012.06.002
DO - 10.1016/j.sse.2012.06.002
M3 - Article
AN - SCOPUS:84869506780
SN - 0038-1101
VL - 79
SP - 22
EP - 25
JO - Solid-State Electronics
JF - Solid-State Electronics
ER -