A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation

Sourabh Khandelwal*, Nitin Goyal, Tor A. Fjeldly

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In this paper we present a precise physics based analytical model for the two-dimensional electron gas density ns in AlGaAs/GaAs high electron mobility transistors. The model is developed by considering the variation of Fermi-level Ef, the first sub-band E0, the second sub-band E1, and ns with the applied gate voltage Vg. Taking into account the interdependence between Ef and ns, we have developed an explicit expression for ns in terms of bias voltages. The developed expression for ns is valid in all the regions of device operation, with gate-voltage ranging from below to above the cut-off voltage. The proposed model is in very good agreement with numerical calculations.

Original languageEnglish
Pages (from-to)22-25
Number of pages4
JournalSolid-State Electronics
Volume79
DOIs
Publication statusPublished - Jan 2013
Externally publishedYes

Keywords

  • 2-DEG charge density
  • AlGaAs/GaAs HEMT
  • Analytical models
  • MODFETs

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