A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation

Sourabh Khandelwal; Nitin Goyal; Tor A. Fjeldly

doi:10.1016/j.sse.2012.06.002

A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation

Sourabh Khandelwal^*, Nitin Goyal, Tor A. Fjeldly

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In this paper we present a precise physics based analytical model for the two-dimensional electron gas density n_s in AlGaAs/GaAs high electron mobility transistors. The model is developed by considering the variation of Fermi-level E_f, the first sub-band E₀, the second sub-band E₁, and n_s with the applied gate voltage V_g. Taking into account the interdependence between E_f and n_s, we have developed an explicit expression for n_s in terms of bias voltages. The developed expression for n_s is valid in all the regions of device operation, with gate-voltage ranging from below to above the cut-off voltage. The proposed model is in very good agreement with numerical calculations.

Original language	English
Pages (from-to)	22-25
Number of pages	4
Journal	Solid-State Electronics
Volume	79
DOIs	https://doi.org/10.1016/j.sse.2012.06.002
Publication status	Published - Jan 2013
Externally published	Yes

Keywords

2-DEG charge density
AlGaAs/GaAs HEMT
Analytical models
MODFETs

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10.1016/j.sse.2012.06.002

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title = "A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation",

abstract = "In this paper we present a precise physics based analytical model for the two-dimensional electron gas density ns in AlGaAs/GaAs high electron mobility transistors. The model is developed by considering the variation of Fermi-level Ef, the first sub-band E0, the second sub-band E1, and ns with the applied gate voltage Vg. Taking into account the interdependence between Ef and ns, we have developed an explicit expression for ns in terms of bias voltages. The developed expression for ns is valid in all the regions of device operation, with gate-voltage ranging from below to above the cut-off voltage. The proposed model is in very good agreement with numerical calculations.",

keywords = "2-DEG charge density, AlGaAs/GaAs HEMT, Analytical models, MODFETs",

author = "Sourabh Khandelwal and Nitin Goyal and Fjeldly, \{Tor A.\}",

year = "2013",

month = jan,

doi = "10.1016/j.sse.2012.06.002",

language = "English",

volume = "79",

pages = "22--25",

journal = "Solid-State Electronics",

issn = "0038-1101",

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T1 - A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation

AU - Khandelwal, Sourabh

AU - Goyal, Nitin

AU - Fjeldly, Tor A.

PY - 2013/1

Y1 - 2013/1

N2 - In this paper we present a precise physics based analytical model for the two-dimensional electron gas density ns in AlGaAs/GaAs high electron mobility transistors. The model is developed by considering the variation of Fermi-level Ef, the first sub-band E0, the second sub-band E1, and ns with the applied gate voltage Vg. Taking into account the interdependence between Ef and ns, we have developed an explicit expression for ns in terms of bias voltages. The developed expression for ns is valid in all the regions of device operation, with gate-voltage ranging from below to above the cut-off voltage. The proposed model is in very good agreement with numerical calculations.

AB - In this paper we present a precise physics based analytical model for the two-dimensional electron gas density ns in AlGaAs/GaAs high electron mobility transistors. The model is developed by considering the variation of Fermi-level Ef, the first sub-band E0, the second sub-band E1, and ns with the applied gate voltage Vg. Taking into account the interdependence between Ef and ns, we have developed an explicit expression for ns in terms of bias voltages. The developed expression for ns is valid in all the regions of device operation, with gate-voltage ranging from below to above the cut-off voltage. The proposed model is in very good agreement with numerical calculations.

KW - 2-DEG charge density

KW - AlGaAs/GaAs HEMT

KW - Analytical models

KW - MODFETs

UR - https://www.scopus.com/pages/publications/84869506780

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DO - 10.1016/j.sse.2012.06.002

M3 - Article

AN - SCOPUS:84869506780

SN - 0038-1101

VL - 79

SP - 22

EP - 25

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation

Abstract

Keywords

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