A precise physics-based compact model for 2-DEG charge density in GaAs HEMTs applicable in all regions of device operation

Engineering

• Gallium Arsenide 100%
• Charge Density 100%
• Gate Voltage 100%
• Good Agreement 50%
• Explicit Expression 50%
• Numerical Calculation 50%
• Analytical Model 50%
• Bias Voltage 50%
• Aluminium Gallium Arsenide 50%
• Fermi Level 50%
• Interdependence 50%
• Gas Density 50%
• Two-Dimensional Electron Gas 50%
• Developed Expression 50%

Physics

• Physics 100%
• High Electron Mobility Transistors 50%
• Electron Gas 50%