A Predictive Tunnel FET Compact Model with Atomistic Simulation Validation

Yen Kai Lin; Sourabh Khandelwal; Juan Pablo Duarte; Huan Lin Chang; Sayeef Salahuddin; Chenming Hu

doi:10.1109/TED.2016.2639547

A Predictive Tunnel FET Compact Model with Atomistic Simulation Validation

Yen Kai Lin, Sourabh Khandelwal, Juan Pablo Duarte, Huan Lin Chang, Sayeef Salahuddin, Chenming Hu

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

A predictive tunnel FET compact model is proposed. Gaussian quadrature method is used to overcome the challenge of integration. This provides the flexibility to use Wentzel-Kramers-Brillouin under spatially varying electric field, to incorporate effective band edge states broadening, and to evaluate the drain current by Landauer equation with consideration of electron reflection at the tunnel junction. The model not only shows good accuracy, speed, and smoothness, but is also some predictive capability so that the effects of changing material parameters on IC characteristics are well captured. The model is validated with atomistic simulation data for several materials.

Original language	English
Article number	7802620
Pages (from-to)	599-605
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	2
DOIs	https://doi.org/10.1109/TED.2016.2639547
Publication status	Published - 1 Feb 2017
Externally published	Yes

Keywords

Compact model
Gaussian quadrature
Landauer equation
tunnel FET (TFET)

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abstract = "A predictive tunnel FET compact model is proposed. Gaussian quadrature method is used to overcome the challenge of integration. This provides the flexibility to use Wentzel-Kramers-Brillouin under spatially varying electric field, to incorporate effective band edge states broadening, and to evaluate the drain current by Landauer equation with consideration of electron reflection at the tunnel junction. The model not only shows good accuracy, speed, and smoothness, but is also some predictive capability so that the effects of changing material parameters on IC characteristics are well captured. The model is validated with atomistic simulation data for several materials.",

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AU - Duarte, Juan Pablo

AU - Chang, Huan Lin

AU - Salahuddin, Sayeef

AU - Hu, Chenming

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AB - A predictive tunnel FET compact model is proposed. Gaussian quadrature method is used to overcome the challenge of integration. This provides the flexibility to use Wentzel-Kramers-Brillouin under spatially varying electric field, to incorporate effective band edge states broadening, and to evaluate the drain current by Landauer equation with consideration of electron reflection at the tunnel junction. The model not only shows good accuracy, speed, and smoothness, but is also some predictive capability so that the effects of changing material parameters on IC characteristics are well captured. The model is validated with atomistic simulation data for several materials.

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A Predictive Tunnel FET Compact Model with Atomistic Simulation Validation

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Keywords

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