A quasi-periodic modulation strategy to mitigate EMI for a GaN-based quasi-Z-source DC-DC converter

Saad Ul Hasan; Graham E. Town

doi:10.1109/ECCE.2016.7854763

A quasi-periodic modulation strategy to mitigate EMI for a GaN-based quasi-Z-source DC-DC converter

Saad Ul Hasan, Graham E. Town

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

Wide-bandgap (WBG) switching devices, such as gallium nitride (GaN), enable switching at high frequencies with low rise and fall times. This provides advantages such as high power density and compact size, however a potential unwanted side-effect is increased electromagnetic interference (EMI) because of large transient currents. A novel quasi-periodic modulation scheme is described for voltage-fed quasi-Z-source (qZS) DC-DC converters which substantially reduces the peak EMI. The driver logic required is simple and generic, and therefore adaptable to all modulation schemes proposed to date for isolated qZS DC-DC converters. Various experimental results verify the effectiveness of the proposed strategy in terms of voltage gain, efficiency and EMI suppression.

Original language	English
Title of host publication	ECCE 2016 IEEE Energy Conversion Congress and Exposition
Subtitle of host publication	proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-5
Number of pages	5
ISBN (Electronic)	9781509007370
ISBN (Print)	9781509007387
DOIs	https://doi.org/10.1109/ECCE.2016.7854763
Publication status	Published - 2016
Event	2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016 - Milwaukee, United States Duration: 18 Sep 2016 → 22 Sep 2016

Other

Other	2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016
Country/Territory	United States
City	Milwaukee
Period	18/09/16 → 22/09/16

Keywords

DC-DC converters
electromagnetic interference (EMI)
gallium nitride (GaN)
high electron mobility transistor (HEMT)
pulse width modulation (PWM)
quasi-Z-source (qZS)
wide bandgap (WBG)

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10.1109/ECCE.2016.7854763

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@inproceedings{293b85b16bb94de1b66f607151710a8b,

title = "A quasi-periodic modulation strategy to mitigate EMI for a GaN-based quasi-Z-source DC-DC converter",

abstract = "Wide-bandgap (WBG) switching devices, such as gallium nitride (GaN), enable switching at high frequencies with low rise and fall times. This provides advantages such as high power density and compact size, however a potential unwanted side-effect is increased electromagnetic interference (EMI) because of large transient currents. A novel quasi-periodic modulation scheme is described for voltage-fed quasi-Z-source (qZS) DC-DC converters which substantially reduces the peak EMI. The driver logic required is simple and generic, and therefore adaptable to all modulation schemes proposed to date for isolated qZS DC-DC converters. Various experimental results verify the effectiveness of the proposed strategy in terms of voltage gain, efficiency and EMI suppression.",

keywords = "DC-DC converters, electromagnetic interference (EMI), gallium nitride (GaN), high electron mobility transistor (HEMT), pulse width modulation (PWM), quasi-Z-source (qZS), wide bandgap (WBG)",

author = "Hasan, {Saad Ul} and Town, {Graham E.}",

year = "2016",

doi = "10.1109/ECCE.2016.7854763",

language = "English",

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pages = "1--5",

booktitle = "ECCE 2016 IEEE Energy Conversion Congress and Exposition",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016 ; Conference date: 18-09-2016 Through 22-09-2016",

}

Hasan, SU & Town, GE 2016, A quasi-periodic modulation strategy to mitigate EMI for a GaN-based quasi-Z-source DC-DC converter. in ECCE 2016 IEEE Energy Conversion Congress and Exposition: proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-5, 2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016, Milwaukee, United States, 18/09/16. https://doi.org/10.1109/ECCE.2016.7854763

A quasi-periodic modulation strategy to mitigate EMI for a GaN-based quasi-Z-source DC-DC converter. / Hasan, Saad Ul; Town, Graham E.

ECCE 2016 IEEE Energy Conversion Congress and Exposition: proceedings. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 1-5.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Hasan, Saad Ul

AU - Town, Graham E.

PY - 2016

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N2 - Wide-bandgap (WBG) switching devices, such as gallium nitride (GaN), enable switching at high frequencies with low rise and fall times. This provides advantages such as high power density and compact size, however a potential unwanted side-effect is increased electromagnetic interference (EMI) because of large transient currents. A novel quasi-periodic modulation scheme is described for voltage-fed quasi-Z-source (qZS) DC-DC converters which substantially reduces the peak EMI. The driver logic required is simple and generic, and therefore adaptable to all modulation schemes proposed to date for isolated qZS DC-DC converters. Various experimental results verify the effectiveness of the proposed strategy in terms of voltage gain, efficiency and EMI suppression.

AB - Wide-bandgap (WBG) switching devices, such as gallium nitride (GaN), enable switching at high frequencies with low rise and fall times. This provides advantages such as high power density and compact size, however a potential unwanted side-effect is increased electromagnetic interference (EMI) because of large transient currents. A novel quasi-periodic modulation scheme is described for voltage-fed quasi-Z-source (qZS) DC-DC converters which substantially reduces the peak EMI. The driver logic required is simple and generic, and therefore adaptable to all modulation schemes proposed to date for isolated qZS DC-DC converters. Various experimental results verify the effectiveness of the proposed strategy in terms of voltage gain, efficiency and EMI suppression.

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KW - gallium nitride (GaN)

KW - high electron mobility transistor (HEMT)

KW - pulse width modulation (PWM)

KW - quasi-Z-source (qZS)

KW - wide bandgap (WBG)

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BT - ECCE 2016 IEEE Energy Conversion Congress and Exposition

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Y2 - 18 September 2016 through 22 September 2016

ER -

A quasi-periodic modulation strategy to mitigate EMI for a GaN-based quasi-Z-source DC-DC converter

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