A quasi-periodic modulation strategy to mitigate EMI for a GaN-based quasi-Z-source DC-DC converter

Saad Ul Hasan, Graham E. Town

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

5 Citations (Scopus)

Abstract

Wide-bandgap (WBG) switching devices, such as gallium nitride (GaN), enable switching at high frequencies with low rise and fall times. This provides advantages such as high power density and compact size, however a potential unwanted side-effect is increased electromagnetic interference (EMI) because of large transient currents. A novel quasi-periodic modulation scheme is described for voltage-fed quasi-Z-source (qZS) DC-DC converters which substantially reduces the peak EMI. The driver logic required is simple and generic, and therefore adaptable to all modulation schemes proposed to date for isolated qZS DC-DC converters. Various experimental results verify the effectiveness of the proposed strategy in terms of voltage gain, efficiency and EMI suppression.

Original languageEnglish
Title of host publicationECCE 2016 IEEE Energy Conversion Congress and Exposition
Subtitle of host publicationproceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-5
Number of pages5
ISBN (Electronic)9781509007370
ISBN (Print)9781509007387
DOIs
Publication statusPublished - 2016
Event2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016 - Milwaukee, United States
Duration: 18 Sep 201622 Sep 2016

Other

Other2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016
CountryUnited States
CityMilwaukee
Period18/09/1622/09/16

Keywords

  • DC-DC converters
  • electromagnetic interference (EMI)
  • gallium nitride (GaN)
  • high electron mobility transistor (HEMT)
  • pulse width modulation (PWM)
  • quasi-Z-source (qZS)
  • wide bandgap (WBG)

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