TY - JOUR
T1 - A Raman spectroscopy study of InN
AU - Kuball, M.
AU - Pomeroy, J. W.
AU - Wintrebert-Fouquet, M.
AU - Butcher, K. S A
AU - Lu, Hai
AU - Schaff, W. J.
PY - 2004/8/15
Y1 - 2004/8/15
N2 - We report on the Raman analysis of InN films grown by molecular beam epitaxy (MBE), RF sputtering and remote-plasma enhanced chemical vapor deposition (RPE-CVD). Varying the excitation wavelength, information on the homogeneity of the InN films and the free carrier concentration is extracted. The use of UV Raman spectroscopy to probe excess nitrogen in the InN films via a Raman band located around 2300cm-1 is illustrated. RF sputtered InN was found to contain significantly more excess nitrogen than MBE and RPE-CVD grown InN. The use of resonant Raman scattering spectroscopy to contribute information to the current controversy of the InN band gap is proposed and first results are presented. Resonant Raman scattering under 1.49eV excitation suggests the presence of a critical point in the InN band structure within 200-300meV of this laser excitation energy. Further investigations will be needed to clarify whether this is the band gap or a higher critical point in the band structure.
AB - We report on the Raman analysis of InN films grown by molecular beam epitaxy (MBE), RF sputtering and remote-plasma enhanced chemical vapor deposition (RPE-CVD). Varying the excitation wavelength, information on the homogeneity of the InN films and the free carrier concentration is extracted. The use of UV Raman spectroscopy to probe excess nitrogen in the InN films via a Raman band located around 2300cm-1 is illustrated. RF sputtered InN was found to contain significantly more excess nitrogen than MBE and RPE-CVD grown InN. The use of resonant Raman scattering spectroscopy to contribute information to the current controversy of the InN band gap is proposed and first results are presented. Resonant Raman scattering under 1.49eV excitation suggests the presence of a critical point in the InN band structure within 200-300meV of this laser excitation energy. Further investigations will be needed to clarify whether this is the band gap or a higher critical point in the band structure.
KW - A1. Photoluminescence
KW - A1. Raman scattering
KW - A3. Low temperature growth
KW - A3. Molecular beam epitaxy
KW - B1. Nitrides
UR - http://www.scopus.com/inward/record.url?scp=3342940220&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2004.05.034
DO - 10.1016/j.jcrysgro.2004.05.034
M3 - Article
AN - SCOPUS:3342940220
SN - 0022-0248
VL - 269
SP - 59
EP - 65
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -