A realistic large-signal mesfet model for SPICE

Anthony Edward Parker*, David James Skellern

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    78 Citations (Scopus)

    Abstract

    A comprehensive large-signal MESFET model that provides a realistic description of measured characteristics over all operating regions is presented. It describes subthreshold conduction and breakdown. It has frequency dispersion of both transconductance and drain conductance and derates with power dissipation. All derivatives are continuous for a realistic description of circuit distortion and intermodulation. The model has improved descriptions of capacitance and bias dependence. It has small-signal 5-parameter accuracy extended to a wide range of operating conditions. The model is implemented with new techniques for continuity and dispersion. These provide accurate prediction of circuit performance and also improve simulation speed.

    Original languageEnglish
    Pages (from-to)1563-1571
    Number of pages9
    JournalIEEE Transactions on Microwave Theory and Techniques
    Volume45
    Issue number9
    DOIs
    Publication statusPublished - 1997

    Keywords

    • MESFET's
    • Modeling
    • Simulation

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