A realistic large-signal mesfet model for SPICE

Anthony Edward Parker*, David James Skellern

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

76 Citations (Scopus)

Abstract

A comprehensive large-signal MESFET model that provides a realistic description of measured characteristics over all operating regions is presented. It describes subthreshold conduction and breakdown. It has frequency dispersion of both transconductance and drain conductance and derates with power dissipation. All derivatives are continuous for a realistic description of circuit distortion and intermodulation. The model has improved descriptions of capacitance and bias dependence. It has small-signal 5-parameter accuracy extended to a wide range of operating conditions. The model is implemented with new techniques for continuity and dispersion. These provide accurate prediction of circuit performance and also improve simulation speed.

Original languageEnglish
Pages (from-to)1563-1571
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Volume45
Issue number9
DOIs
Publication statusPublished - 1997

Keywords

  • MESFET's
  • Modeling
  • Simulation

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