A Room temperature single photon source in silicon carbide

S. Castelletto; B. C. Johnson; V. Ivády; N. Stavrias; T. Umeda; A. Gali; T. Ohshima

A Room temperature single photon source in silicon carbide

S. Castelletto, B. C. Johnson, V. Ivády, N. Stavrias, T. Umeda, A. Gali, T. Ohshima

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

We report the first observation of stable single photon sources in an electronic and photonic device-friendly material, silicon carbide (SiC). SiC is a viable material for implementing quantum communication, computation and photonic technologies.

Original language	English
Title of host publication	CLEO 2013
Subtitle of host publication	QELS_Fundamental Science : Technical Digest
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	QM2C.3-1-QM2C.3-2
Number of pages	2
ISBN (Print)	9781557529725
Publication status	Published - 2013
Event	Conference on Lasers and Electro-Optics (CLEO) - San Jose, CA Duration: 9 Jun 2013 → 14 Jun 2013

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO)
City	San Jose, CA
Period	9/06/13 → 14/06/13

Cite this

@inproceedings{30b16045224d4dcfb52cb9c1b6620a5b,

title = "A Room temperature single photon source in silicon carbide",

abstract = "We report the first observation of stable single photon sources in an electronic and photonic device-friendly material, silicon carbide (SiC). SiC is a viable material for implementing quantum communication, computation and photonic technologies.",

author = "S. Castelletto and Johnson, {B. C.} and V. Iv{\'a}dy and N. Stavrias and T. Umeda and A. Gali and T. Ohshima",

year = "2013",

language = "English",

isbn = "9781557529725",

pages = "QM2C.3--1--QM2C.3--2",

booktitle = "CLEO 2013",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Conference on Lasers and Electro-Optics (CLEO) ; Conference date: 09-06-2013 Through 14-06-2013",

}

Castelletto, S, Johnson, BC, Ivády, V, Stavrias, N, Umeda, T, Gali, A & Ohshima, T 2013, A Room temperature single photon source in silicon carbide. in CLEO 2013: QELS_Fundamental Science : Technical Digest. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. QM2C.3-1-QM2C.3-2, Conference on Lasers and Electro-Optics (CLEO), San Jose, CA, 9/06/13.

A Room temperature single photon source in silicon carbide. / Castelletto, S.; Johnson, B. C.; Ivády, V. et al.
CLEO 2013: QELS_Fundamental Science : Technical Digest. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2013. p. QM2C.3-1-QM2C.3-2.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - A Room temperature single photon source in silicon carbide

AU - Castelletto, S.

AU - Johnson, B. C.

AU - Ivády, V.

AU - Stavrias, N.

AU - Umeda, T.

AU - Gali, A.

AU - Ohshima, T.

PY - 2013

Y1 - 2013

N2 - We report the first observation of stable single photon sources in an electronic and photonic device-friendly material, silicon carbide (SiC). SiC is a viable material for implementing quantum communication, computation and photonic technologies.

AB - We report the first observation of stable single photon sources in an electronic and photonic device-friendly material, silicon carbide (SiC). SiC is a viable material for implementing quantum communication, computation and photonic technologies.

M3 - Conference proceeding contribution

SN - 9781557529725

SP - QM2C.3-1-QM2C.3-2

BT - CLEO 2013

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - Conference on Lasers and Electro-Optics (CLEO)

Y2 - 9 June 2013 through 14 June 2013

ER -

A Room temperature single photon source in silicon carbide

Abstract

Conference

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