A scalable linear model for FETs

Jabra Tarazi*, Simon J. Mahon, Anthony P. Fattorini, Michael C. Heimlich, Anthony E. Parker

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

9 Citations (Scopus)

Abstract

A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are required to describe four imaginary Y -parameter terms. The addition of a fourth capacitance rather than a channel resistance or delay term enables extraction of dispersion-free parameters, better consistency with a large-signal model and better scaling properties. An important aspect of the model topology is clear separation of resistive and reactive elements so that transconductance and output conductance correspond to real parts of the Y -parameters. It is shown that this has an impact on the scaling of noise models that are formulated in terms of these resistive parameters.

Original languageEnglish
Title of host publication2011 IEEE MTT-S International Microwave Symposium, IMS 2011
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Electronic)9781612847573
ISBN (Print)9781612847566
DOIs
Publication statusPublished - 2011
Event2011 IEEE MTT-S International Microwave Symposium, IMS 2011 - Baltimore, MD, United States
Duration: 5 Jun 201110 Jun 2011

Other

Other2011 IEEE MTT-S International Microwave Symposium, IMS 2011
CountryUnited States
CityBaltimore, MD
Period5/06/1110/06/11

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