A scalable linear model for FETs

Jabra Tarazi; Simon J. Mahon; Anthony P. Fattorini; Michael C. Heimlich; Anthony E. Parker

doi:10.1109/MWSYM.2011.5972767

A scalable linear model for FETs

Jabra Tarazi^*, Simon J. Mahon, Anthony P. Fattorini, Michael C. Heimlich, Anthony E. Parker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

9 Citations (Scopus)

Abstract

A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are required to describe four imaginary Y -parameter terms. The addition of a fourth capacitance rather than a channel resistance or delay term enables extraction of dispersion-free parameters, better consistency with a large-signal model and better scaling properties. An important aspect of the model topology is clear separation of resistive and reactive elements so that transconductance and output conductance correspond to real parts of the Y -parameters. It is shown that this has an impact on the scaling of noise models that are formulated in terms of these resistive parameters.

Original language	English
Title of host publication	2011 IEEE MTT-S International Microwave Symposium, IMS 2011
Place of Publication	Piscataway, N.J.
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781612847573
ISBN (Print)	9781612847566
DOIs	https://doi.org/10.1109/MWSYM.2011.5972767
Publication status	Published - 2011
Event	2011 IEEE MTT-S International Microwave Symposium, IMS 2011 - Baltimore, MD, United States Duration: 5 Jun 2011 → 10 Jun 2011

Other

Other	2011 IEEE MTT-S International Microwave Symposium, IMS 2011
Country	United States
City	Baltimore, MD
Period	5/06/11 → 10/06/11

Access to Document

10.1109/MWSYM.2011.5972767

Link to publication in Scopus

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Cite this

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title = "A scalable linear model for FETs",

abstract = "A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are required to describe four imaginary Y -parameter terms. The addition of a fourth capacitance rather than a channel resistance or delay term enables extraction of dispersion-free parameters, better consistency with a large-signal model and better scaling properties. An important aspect of the model topology is clear separation of resistive and reactive elements so that transconductance and output conductance correspond to real parts of the Y -parameters. It is shown that this has an impact on the scaling of noise models that are formulated in terms of these resistive parameters.",

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Tarazi, J, Mahon, SJ, Fattorini, AP, Heimlich, MC & Parker, AE 2011, A scalable linear model for FETs. in 2011 IEEE MTT-S International Microwave Symposium, IMS 2011., 5972767, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, N.J., pp. 1-4, 2011 IEEE MTT-S International Microwave Symposium, IMS 2011, Baltimore, MD, United States, 5/06/11. https://doi.org/10.1109/MWSYM.2011.5972767

A scalable linear model for FETs. / Tarazi, Jabra; Mahon, Simon J.; Fattorini, Anthony P.; Heimlich, Michael C.; Parker, Anthony E.

2011 IEEE MTT-S International Microwave Symposium, IMS 2011. Piscataway, N.J. : Institute of Electrical and Electronics Engineers (IEEE), 2011. p. 1-4 5972767.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

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AB - A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are required to describe four imaginary Y -parameter terms. The addition of a fourth capacitance rather than a channel resistance or delay term enables extraction of dispersion-free parameters, better consistency with a large-signal model and better scaling properties. An important aspect of the model topology is clear separation of resistive and reactive elements so that transconductance and output conductance correspond to real parts of the Y -parameters. It is shown that this has an impact on the scaling of noise models that are formulated in terms of these resistive parameters.

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