Abstract
A small-signal model of the intrinsic region of a microwave FET that considers four capacitance terms is examined. Four reactive terms in the model are required to describe four imaginary Y -parameter terms. The addition of a fourth capacitance rather than a channel resistance or delay term enables extraction of dispersion-free parameters, better consistency with a large-signal model and better scaling properties. An important aspect of the model topology is clear separation of resistive and reactive elements so that transconductance and output conductance correspond to real parts of the Y -parameters. It is shown that this has an impact on the scaling of noise models that are formulated in terms of these resistive parameters.
Original language | English |
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Title of host publication | 2011 IEEE MTT-S International Microwave Symposium, IMS 2011 |
Place of Publication | Piscataway, N.J. |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 1-4 |
Number of pages | 4 |
ISBN (Electronic) | 9781612847573 |
ISBN (Print) | 9781612847566 |
DOIs | |
Publication status | Published - 2011 |
Event | 2011 IEEE MTT-S International Microwave Symposium, IMS 2011 - Baltimore, MD, United States Duration: 5 Jun 2011 → 10 Jun 2011 |
Other
Other | 2011 IEEE MTT-S International Microwave Symposium, IMS 2011 |
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Country/Territory | United States |
City | Baltimore, MD |
Period | 5/06/11 → 10/06/11 |