A simple reconfigurable BiCMOS active inductor and its implementation in a phase-shifter unit cell

Sudipta Chakraborty; Budhaditya Majumdar; Michael Heimlich; Karu P. Esselle

A simple reconfigurable BiCMOS active inductor and its implementation in a phase-shifter unit cell

Sudipta Chakraborty, Budhaditya Majumdar, Michael Heimlich, Karu P. Esselle

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

An active inductor based phase-shifter unit cell is proposed. The active inductor is designed with BiCMOS process technology and is implemented with only one heterojunction bipolar transistor and one field-effect transistor without any requirement of complicated transconductance amplifier designs. A phase-shifter unit cell is implemented with a high-pass T-Section with two varactors in series and the active inductor as a shunt. Relative phase variation is achieved by tuning the active inductor or by varying the effective junction capacitance of the varactors. Maximum relative phase variations of 23.7° and 38.6° are achieved at 4 GHz by exclusively tuning the gate voltage and varactor capacitance, respectively. The relative phase variations at 18 GHz are 6.0° and 8.5°, respectively, for the same exclusive conditions.

Original language	English
Title of host publication	2015 International Symposium on Antennas and Propagation, ISAP 2015
Place of Publication	Hobart, Tasmania
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-3
Number of pages	3
ISBN (Electronic)	9784885523038
ISBN (Print)	9784885523021
Publication status	Published - 2015
Event	International Symposium on Antennas and Propagation, ISAP 2015 - Hobart, Australia Duration: 9 Nov 2015 → 12 Nov 2015

Conference

Conference	International Symposium on Antennas and Propagation, ISAP 2015
Country/Territory	Australia
City	Hobart
Period	9/11/15 → 12/11/15

Cite this

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title = "A simple reconfigurable BiCMOS active inductor and its implementation in a phase-shifter unit cell",

abstract = "An active inductor based phase-shifter unit cell is proposed. The active inductor is designed with BiCMOS process technology and is implemented with only one heterojunction bipolar transistor and one field-effect transistor without any requirement of complicated transconductance amplifier designs. A phase-shifter unit cell is implemented with a high-pass T-Section with two varactors in series and the active inductor as a shunt. Relative phase variation is achieved by tuning the active inductor or by varying the effective junction capacitance of the varactors. Maximum relative phase variations of 23.7° and 38.6° are achieved at 4 GHz by exclusively tuning the gate voltage and varactor capacitance, respectively. The relative phase variations at 18 GHz are 6.0° and 8.5°, respectively, for the same exclusive conditions.",

author = "Sudipta Chakraborty and Budhaditya Majumdar and Michael Heimlich and Esselle, {Karu P.}",

year = "2015",

language = "English",

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pages = "1--3",

booktitle = "2015 International Symposium on Antennas and Propagation, ISAP 2015",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "International Symposium on Antennas and Propagation, ISAP 2015 ; Conference date: 09-11-2015 Through 12-11-2015",

}

Chakraborty, S, Majumdar, B, Heimlich, M & Esselle, KP 2015, A simple reconfigurable BiCMOS active inductor and its implementation in a phase-shifter unit cell. in 2015 International Symposium on Antennas and Propagation, ISAP 2015., 7447496, Institute of Electrical and Electronics Engineers (IEEE), Hobart, Tasmania, pp. 1-3, International Symposium on Antennas and Propagation, ISAP 2015, Hobart, Australia, 9/11/15.

A simple reconfigurable BiCMOS active inductor and its implementation in a phase-shifter unit cell. / Chakraborty, Sudipta; Majumdar, Budhaditya; Heimlich, Michael; Esselle, Karu P.

2015 International Symposium on Antennas and Propagation, ISAP 2015. Hobart, Tasmania : Institute of Electrical and Electronics Engineers (IEEE), 2015. p. 1-3 7447496.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - A simple reconfigurable BiCMOS active inductor and its implementation in a phase-shifter unit cell

AU - Chakraborty, Sudipta

AU - Majumdar, Budhaditya

AU - Heimlich, Michael

AU - Esselle, Karu P.

PY - 2015

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N2 - An active inductor based phase-shifter unit cell is proposed. The active inductor is designed with BiCMOS process technology and is implemented with only one heterojunction bipolar transistor and one field-effect transistor without any requirement of complicated transconductance amplifier designs. A phase-shifter unit cell is implemented with a high-pass T-Section with two varactors in series and the active inductor as a shunt. Relative phase variation is achieved by tuning the active inductor or by varying the effective junction capacitance of the varactors. Maximum relative phase variations of 23.7° and 38.6° are achieved at 4 GHz by exclusively tuning the gate voltage and varactor capacitance, respectively. The relative phase variations at 18 GHz are 6.0° and 8.5°, respectively, for the same exclusive conditions.

AB - An active inductor based phase-shifter unit cell is proposed. The active inductor is designed with BiCMOS process technology and is implemented with only one heterojunction bipolar transistor and one field-effect transistor without any requirement of complicated transconductance amplifier designs. A phase-shifter unit cell is implemented with a high-pass T-Section with two varactors in series and the active inductor as a shunt. Relative phase variation is achieved by tuning the active inductor or by varying the effective junction capacitance of the varactors. Maximum relative phase variations of 23.7° and 38.6° are achieved at 4 GHz by exclusively tuning the gate voltage and varactor capacitance, respectively. The relative phase variations at 18 GHz are 6.0° and 8.5°, respectively, for the same exclusive conditions.

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M3 - Conference proceeding contribution

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EP - 3

BT - 2015 International Symposium on Antennas and Propagation, ISAP 2015

PB - Institute of Electrical and Electronics Engineers (IEEE)

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T2 - International Symposium on Antennas and Propagation, ISAP 2015

Y2 - 9 November 2015 through 12 November 2015

ER -

A simple reconfigurable BiCMOS active inductor and its implementation in a phase-shifter unit cell

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