A simple reconfigurable BiCMOS active inductor and its implementation in a phase-shifter unit cell

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

An active inductor based phase-shifter unit cell is proposed. The active inductor is designed with BiCMOS process technology and is implemented with only one heterojunction bipolar transistor and one field-effect transistor without any requirement of complicated transconductance amplifier designs. A phase-shifter unit cell is implemented with a high-pass T-Section with two varactors in series and the active inductor as a shunt. Relative phase variation is achieved by tuning the active inductor or by varying the effective junction capacitance of the varactors. Maximum relative phase variations of 23.7° and 38.6° are achieved at 4 GHz by exclusively tuning the gate voltage and varactor capacitance, respectively. The relative phase variations at 18 GHz are 6.0° and 8.5°, respectively, for the same exclusive conditions.

Original languageEnglish
Title of host publication2015 International Symposium on Antennas and Propagation, ISAP 2015
Place of PublicationHobart, Tasmania
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-3
Number of pages3
ISBN (Electronic)9784885523038
Publication statusPublished - 2015
EventInternational Symposium on Antennas and Propagation, ISAP 2015 - Hobart, Australia
Duration: 9 Nov 201512 Nov 2015

Conference

ConferenceInternational Symposium on Antennas and Propagation, ISAP 2015
CountryAustralia
CityHobart
Period9/11/1512/11/15

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