A "smart stack" triple-junction cell consisting of InGaP/GaAs and crystalline Si

Hidenori Mizuno; Kikuo Makita; Takeshi Tayagaki; Toshimitsu Mochizuki; Hidetaka Takato; Takeyoshi Sugaya; Hamid Mehrvarz; Martin Green; Anita Ho-Baillie

doi:10.1109/PVSC.2016.7749959

A "smart stack" triple-junction cell consisting of InGaP/GaAs and crystalline Si

Hidenori Mizuno, Kikuo Makita, Takeshi Tayagaki, Toshimitsu Mochizuki, Hidetaka Takato, Takeyoshi Sugaya, Hamid Mehrvarz, Martin Green, Anita Ho-Baillie

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

4 Citations (Scopus)

Abstract

Smart stack is a handy method to construct multi-junction tandem through the interconnection of different types of solar cells using a Pd nanoparticle array as a bonding mediator. In this study, a triple-junction cell was fabricated from InGaP/GaAs and crystalline Si subcells using the smart stack method, which resulted in a conversion efficiency of 23.2%. The EQE analysis of the smart stack cell was also carried out, suggesting that higher efficiencies are feasible through better current matching among the subcells.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1923-1925
Number of pages	3
ISBN (Electronic)	9781509027248
ISBN (Print)	9781509027255
DOIs	https://doi.org/10.1109/PVSC.2016.7749959
Publication status	Published - 2016
Externally published	Yes
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

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10.1109/PVSC.2016.7749959

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Mizuno, H., Makita, K., Tayagaki, T., Mochizuki, T., Takato, H., Sugaya, T., Mehrvarz, H., Green, M., & Ho-Baillie, A. (2016). A "smart stack" triple-junction cell consisting of InGaP/GaAs and crystalline Si. In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) (pp. 1923-1925). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/PVSC.2016.7749959

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abstract = "Smart stack is a handy method to construct multi-junction tandem through the interconnection of different types of solar cells using a Pd nanoparticle array as a bonding mediator. In this study, a triple-junction cell was fabricated from InGaP/GaAs and crystalline Si subcells using the smart stack method, which resulted in a conversion efficiency of 23.2%. The EQE analysis of the smart stack cell was also carried out, suggesting that higher efficiencies are feasible through better current matching among the subcells.",

author = "Hidenori Mizuno and Kikuo Makita and Takeshi Tayagaki and Toshimitsu Mochizuki and Hidetaka Takato and Takeyoshi Sugaya and Hamid Mehrvarz and Martin Green and Anita Ho-Baillie",

year = "2016",

doi = "10.1109/PVSC.2016.7749959",

language = "English",

isbn = "9781509027255",

pages = "1923--1925",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

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Mizuno, H, Makita, K, Tayagaki, T, Mochizuki, T, Takato, H, Sugaya, T, Mehrvarz, H, Green, M & Ho-Baillie, A 2016, A "smart stack" triple-junction cell consisting of InGaP/GaAs and crystalline Si. in 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1923-1925, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16. https://doi.org/10.1109/PVSC.2016.7749959

A "smart stack" triple-junction cell consisting of InGaP/GaAs and crystalline Si. / Mizuno, Hidenori; Makita, Kikuo; Tayagaki, Takeshi et al.
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 1923-1925.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - A "smart stack" triple-junction cell consisting of InGaP/GaAs and crystalline Si

AU - Mizuno, Hidenori

AU - Makita, Kikuo

AU - Tayagaki, Takeshi

AU - Mochizuki, Toshimitsu

AU - Takato, Hidetaka

AU - Sugaya, Takeyoshi

AU - Mehrvarz, Hamid

AU - Green, Martin

AU - Ho-Baillie, Anita

PY - 2016

Y1 - 2016

N2 - Smart stack is a handy method to construct multi-junction tandem through the interconnection of different types of solar cells using a Pd nanoparticle array as a bonding mediator. In this study, a triple-junction cell was fabricated from InGaP/GaAs and crystalline Si subcells using the smart stack method, which resulted in a conversion efficiency of 23.2%. The EQE analysis of the smart stack cell was also carried out, suggesting that higher efficiencies are feasible through better current matching among the subcells.

AB - Smart stack is a handy method to construct multi-junction tandem through the interconnection of different types of solar cells using a Pd nanoparticle array as a bonding mediator. In this study, a triple-junction cell was fabricated from InGaP/GaAs and crystalline Si subcells using the smart stack method, which resulted in a conversion efficiency of 23.2%. The EQE analysis of the smart stack cell was also carried out, suggesting that higher efficiencies are feasible through better current matching among the subcells.

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U2 - 10.1109/PVSC.2016.7749959

DO - 10.1109/PVSC.2016.7749959

M3 - Conference proceeding contribution

AN - SCOPUS:85003583784

SN - 9781509027255

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EP - 1925

BT - 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

A "smart stack" triple-junction cell consisting of InGaP/GaAs and crystalline Si

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