A study of hard switching characteristics of GaN-based DC-DC boost power converter using ASM-GaN compact model

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2 Citations (Scopus)

Abstract

This paper studies the hard switching characteristics of a DC-DC Boost converter based on GaN device using ASM-GaN compact model. The accurate prediction of OFF state output capacitance Coss and I-V characteristics based on underlying Physics by ASM-GaN model results in expected prediction of the dynamic character of switching losses across the power transistor. These simulations can thus be used to predict the switching losses and furthermore help in the optimization of power converter design during the initial phase of design.

Original languageEnglish
Title of host publication2018 Australasian Universities Power Engineering Conference (AUPEC)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781538684740, 9781538684733
ISBN (Print)9781538684757
DOIs
Publication statusPublished - 2018
Event2018 Australasian Universities Power Engineering Conference, AUPEC 2018 - Auckland, New Zealand
Duration: 27 Nov 201830 Nov 2018

Publication series

Name
ISSN (Print)2474-1493
ISSN (Electronic)2474-1507

Conference

Conference2018 Australasian Universities Power Engineering Conference, AUPEC 2018
CountryNew Zealand
CityAuckland
Period27/11/1830/11/18

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