A study of indium nitride films grown under conditions resulting in apparent band-gaps from 0.7 eV to 2.3 eV

K. S.A. Butcher*, M. Wintrebert-Fouquet, Motlan, S. K. Shrestha, H. Timmers, K. E. Prince, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The band-gap of indium nitride has long been believed to be about 1.9eV with slight variations due to band-tailing in polycrystalline samples and degenerate doping. Recently, other values as low as 0.7 eV have apparently been observed. We have compared samples spanning this apparent range of band-gap using secondary ion mass spectroscopy (SIMS), X-ray Photoelectron Spectroscopy (XPS) and heavy ion elastic recoil detection analysis (ERDA), in conjunction with spectral optical density measurements. Once structural inhomogeneiteies are taken into account, we show that much of the conflicting data are compatible with direct photoionisation with a threshold energy of about 1.0eV. This feature was first reported in polycrystalline indium nitride over 15 years ago and attributed to a |p> like defect state. We ask whether the feature may instead be a direct band-gap.

Original languageEnglish
Pages (from-to)707-712
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume743
Publication statusPublished - 2002

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