A surface-potential-based compact model for study of non-linearities in AlGaAs/GaAs HEMTs

Sourabh Khandelwal; Tor A. Fjeldly

doi:10.1109/CSICS.2012.6340055

A surface-potential-based compact model for study of non-linearities in AlGaAs/GaAs HEMTs

Sourabh Khandelwal^*, Tor A. Fjeldly

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

6 Citations (Scopus)

Abstract

We present a continuous surface-potential- based electro-thermal compact model suitable for the study of intermodulation distortion IMD in GaAs HEMT devices. We have developed a precise analytical calculation for the position of the Fermi level Ef in these devices from a consistent solution of Schrödinger's and Poisson's equations. The accuracy of our calculation is of the order of pico-volts. Ef is used to define the surface-potential ψ and subsequently derive the drain current Id. We use the developed Id model for prediction of IMD in these devices using Volterra series method. The model is in excellent agreement with experimental IMD data. The impact of various real device effects like self- heating, mobility degradation etc., on the non- linear behavior of the device is analyzed using the model.

Original language	English
Title of host publication	2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
Subtitle of host publication	Technical Digest 2012
Place of Publication	Piscataway, New Jersey
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Print)	9781467309295
DOIs	https://doi.org/10.1109/CSICS.2012.6340055
Publication status	Published - 2012
Externally published	Yes
Event	2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - La Jolla, CA, United States Duration: 14 Oct 2012 → 17 Oct 2012

Other

Other	2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012
Country/Territory	United States
City	La Jolla, CA
Period	14/10/12 → 17/10/12

Keywords

AlGaAs/GaAs HEMTs
Compact models
Intermodulation distortion

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10.1109/CSICS.2012.6340055

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title = "A surface-potential-based compact model for study of non-linearities in AlGaAs/GaAs HEMTs",

abstract = "We present a continuous surface-potential- based electro-thermal compact model suitable for the study of intermodulation distortion IMD in GaAs HEMT devices. We have developed a precise analytical calculation for the position of the Fermi level Ef in these devices from a consistent solution of Schr{\"o}dinger's and Poisson's equations. The accuracy of our calculation is of the order of pico-volts. Ef is used to define the surface-potential ψ and subsequently derive the drain current Id. We use the developed Id model for prediction of IMD in these devices using Volterra series method. The model is in excellent agreement with experimental IMD data. The impact of various real device effects like self- heating, mobility degradation etc., on the non- linear behavior of the device is analyzed using the model.",

keywords = "AlGaAs/GaAs HEMTs, Compact models, Intermodulation distortion",

author = "Sourabh Khandelwal and Fjeldly, {Tor A.}",

year = "2012",

doi = "10.1109/CSICS.2012.6340055",

language = "English",

isbn = "9781467309295",

pages = "1--4",

booktitle = "2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 ; Conference date: 14-10-2012 Through 17-10-2012",

}

Khandelwal, S & Fjeldly, TA 2012, A surface-potential-based compact model for study of non-linearities in AlGaAs/GaAs HEMTs. in 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS): Technical Digest 2012., 6340055, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, New Jersey, pp. 1-4, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, United States, 14/10/12. https://doi.org/10.1109/CSICS.2012.6340055

A surface-potential-based compact model for study of non-linearities in AlGaAs/GaAs HEMTs. / Khandelwal, Sourabh; Fjeldly, Tor A.

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS): Technical Digest 2012. Piscataway, New Jersey : Institute of Electrical and Electronics Engineers (IEEE), 2012. p. 1-4 6340055.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - A surface-potential-based compact model for study of non-linearities in AlGaAs/GaAs HEMTs

AU - Khandelwal, Sourabh

AU - Fjeldly, Tor A.

PY - 2012

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N2 - We present a continuous surface-potential- based electro-thermal compact model suitable for the study of intermodulation distortion IMD in GaAs HEMT devices. We have developed a precise analytical calculation for the position of the Fermi level Ef in these devices from a consistent solution of Schrödinger's and Poisson's equations. The accuracy of our calculation is of the order of pico-volts. Ef is used to define the surface-potential ψ and subsequently derive the drain current Id. We use the developed Id model for prediction of IMD in these devices using Volterra series method. The model is in excellent agreement with experimental IMD data. The impact of various real device effects like self- heating, mobility degradation etc., on the non- linear behavior of the device is analyzed using the model.

AB - We present a continuous surface-potential- based electro-thermal compact model suitable for the study of intermodulation distortion IMD in GaAs HEMT devices. We have developed a precise analytical calculation for the position of the Fermi level Ef in these devices from a consistent solution of Schrödinger's and Poisson's equations. The accuracy of our calculation is of the order of pico-volts. Ef is used to define the surface-potential ψ and subsequently derive the drain current Id. We use the developed Id model for prediction of IMD in these devices using Volterra series method. The model is in excellent agreement with experimental IMD data. The impact of various real device effects like self- heating, mobility degradation etc., on the non- linear behavior of the device is analyzed using the model.

KW - AlGaAs/GaAs HEMTs

KW - Compact models

KW - Intermodulation distortion

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M3 - Conference proceeding contribution

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SP - 1

EP - 4

BT - 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

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Y2 - 14 October 2012 through 17 October 2012

ER -

A surface-potential-based compact model for study of non-linearities in AlGaAs/GaAs HEMTs

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